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IRF830STRLPBF-VB Product details

Product introduction:

1. Product Introduction
IRF830STRLPBF-VB is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage switching applications. With a drain-source voltage (VDS) of 650V, this MOSFET is suitable for applications requiring high voltage tolerance. The threshold voltage (Vth) of IRF830STRLPBF-VB is 3.5V, ensuring turn-on at a lower gate-source voltage. Its on-resistance (RDS(ON)) is 2200mΩ (at VGS=10V), and it can handle a drain current (ID) of up to 4A. Using planar technology (Plannar), this MOSFET provides better voltage control and stable switching performance, and is suitable for switching applications in high voltage environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 650V 3.5V 4A 2200mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 650V 3.5V 4A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 650V 3.5V 4A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description
- **Package type**: TO263
- **MOSFET type**: Single N-channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 2200mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology type**: Plannar
- **Power dissipation**: Depends on heat dissipation conditions
- **Switching speed**: Medium
- **Input capacitance (Ciss)**: Refer to the data sheet according to specific circuit conditions

Domain and module applications:

3. Application fields and modules
Due to its high voltage tolerance and relatively high on-resistance, IRF830STRLPBF-VB is suitable for multiple high voltage application scenarios. Here are some typical application fields:

1. **High voltage switch**: Due to its 650V VDS, IRF830STRLPBF-VB is very suitable for high voltage switching applications such as power switches and high voltage control circuits. It is able to handle higher voltages and ensure stable operation in high voltage environments.

2. **Power amplifier**: In power amplifiers, especially applications that need to process high voltage signals, this MOSFET can be used as a high voltage control switch to ensure efficient transmission and stable amplification of signals.

3. **Power module**: In high voltage power modules, such as switching power supplies (SMPS) and uninterruptible power supplies (UPS), IRF830STRLPBF-VB, as a switching component, can improve the efficiency and stability of the power module and is suitable for power systems with high voltage input and output.

4. **Industrial Control**: In industrial control systems, IRF830STRLPBF-VB can be used for switching control of high voltage loads, providing stable current control and efficient voltage management, suitable for industrial automation equipment and control systems.

5. **Automotive Electronics**: In automotive electronic applications, such as high voltage power management and automotive control modules, IRF830STRLPBF-VB is able to handle high voltage switching requirements, ensuring the reliability and stability of automotive electronic systems.

With its high voltage tolerance and stable switching performance, IRF830STRLPBF-VB provides a reliable solution for high voltage environments and is widely used in various electronic and industrial control fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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