IRF830I-HF-VB Product details
Product introduction:
**IRF830I-HF-VB** is a high-voltage **single N-channel MOSFET**, packaged in **TO220F**. This MOSFET is mainly designed for high-voltage applications, with a **drain-source voltage (VDS)** of **650V** and a **gate-source voltage (VGS)** of ±30V. Its **threshold voltage (Vth)** is **3.5V**, allowing effective conduction at a lower gate voltage. Although the **RDS(ON)** of this MOSFET is **2560mΩ** at **10V gate-source voltage**, which is relatively high, its high voltage carrying capability makes it suitable for specific high-voltage applications. The maximum **drain current (ID)** is **4A**, and it uses **Plannar** technology, which is suitable for applications requiring high-voltage insulation and robust performance.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package: ** TO220F
- **Configuration: ** Single N-channel
- **Drain-source voltage (VDS): ** 650V
- **Gate-source voltage (VGS): ** ±30V
- **Threshold voltage (Vth): ** 3.5V
- **RDS(ON): **
- 2560mΩ @ VGS = 10V
- **Drain current (ID): ** 4A
- **Technology: ** Plannar
- **Switching speed: ** Medium, suitable for medium and high frequency applications
- **Power consumption: ** Moderate, suitable for high voltage environment
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Domain and module applications:
1. **High Voltage Power Switch:**
**IRF830I-HF-VB**'s **650V** high drain-source voltage makes it suitable for **high voltage power switch** applications. It can effectively handle current switching in high voltage environments and is widely used in **high voltage power supplies** and **power converters**, such as **power modules** and **high voltage DC-DC converters**, ensuring safety and stability under high voltage operation.
2. **AC Power Switch:**
This MOSFET is also suitable for **AC power switch** applications, especially in **high voltage AC load control**. It can effectively switch current in high voltage AC environments and is suitable for **power regulators** and **AC load switches**, such as **power protection circuits** and **high power switching power supplies**, ensuring reliable switching of loads.
3. **Motor drive system:**
**IRF830I-HF-VB** can also be applied to **motor drive systems**, especially motor drive modules that require high voltage control. It can withstand high voltage and provide robust switching capabilities in motor control applications, and is widely used in **industrial motor drives** and **high voltage power tools**.
4. **Switching power supply protection:**
Due to its high voltage tolerance, **IRF830I-HF-VB** can also be used for **switching power supply protection**. In **switching power supply** systems, it can be used as an **overvoltage protection switch** to protect the power circuit from overvoltage and ensure the safety and stability of the system.
These application examples demonstrate the applicability of **IRF830I-HF-VB** in **high voltage power switching, motor drive systems** and **AC power switching**, and are particularly suitable for design requirements that require high voltage carrying and robust performance.
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