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IRF8010SPBF-VB Product details
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Product Introduction
IRF8010SPBF-VB is a high-performance N-channel power MOSFET in TO263 package. Its drain-source voltage (VDS) is 100V, gate-source voltage (VGS) is ±20V, and it has a high drain current (ID) capability of 100A. The threshold voltage (Vth) is 2.5V, which enables it to be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of IRF8010SPBF-VB is 23mΩ at VGS=4.5V and 10mΩ at VGS=10V. It uses Trench technology to provide low power consumption and high-efficiency switching performance. This MOSFET is suitable for applications requiring high current and high voltage.
IRF8010SPBF-VB is a high-performance N-channel power MOSFET in TO263 package. Its drain-source voltage (VDS) is 100V, gate-source voltage (VGS) is ±20V, and it has a high drain current (ID) capability of 100A. The threshold voltage (Vth) is 2.5V, which enables it to be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of IRF8010SPBF-VB is 23mΩ at VGS=4.5V and 10mΩ at VGS=10V. It uses Trench technology to provide low power consumption and high-efficiency switching performance. This MOSFET is suitable for applications requiring high current and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
| Parameter| Value|
|---------------------|-----------------------|
| Part number| IRF8010SPBF-VB |
| Package| TO263 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 23mΩ @ VGS=4.5V |
| | 10mΩ @ VGS=10V |
| Drain current (ID) | 100A |
| Technology| Trench |
| Parameter| Value|
|---------------------|-----------------------|
| Part number| IRF8010SPBF-VB |
| Package| TO263 |
| Configuration| Single N-channel|
| Drain-source voltage (VDS) | 100V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | 2.5V |
| On-resistance (RDS(ON)) | 23mΩ @ VGS=4.5V |
| | 10mΩ @ VGS=10V |
| Drain current (ID) | 100A |
| Technology| Trench |
Domain and module applications：
Applications and modules
1. **High-power power management**
- IRF8010SPBF-VB is suitable for high-power power management systems. Its high current carrying capacity and low RDS(ON) characteristics enable it to effectively handle high-power currents and reduce power consumption. In DC-DC converters, power modules, and high-power power switches, it can provide efficient power management.
2. **Electric vehicles and motor drives**
- In electric vehicles and motor drive applications, the high current capability and low on-resistance of this MOSFET enable it to effectively drive high-power motors. It is suitable for electric vehicle motor drive systems and high-power motor control modules to ensure efficient operation and long-term stable operation of the motor.
3. **Industrial automation**
- IRF8010SPBF-VB is also widely used in industrial automation systems, especially in scenarios where high-power loads need to be controlled. Its low RDS(ON) characteristics and high current handling capability make it suitable for industrial switches, motor control, and load switch modules.
4. **Inverter and UPS Systems**
- This MOSFET can be used in inverter and uninterruptible power supply (UPS) systems to provide stable high current handling capabilities. Its use in inverters can improve energy efficiency and ensure the reliability of UPS systems during power outages. Its high voltage withstand capability and low on-resistance help improve the overall performance of inverter and UPS systems.
1. **High-power power management**
- IRF8010SPBF-VB is suitable for high-power power management systems. Its high current carrying capacity and low RDS(ON) characteristics enable it to effectively handle high-power currents and reduce power consumption. In DC-DC converters, power modules, and high-power power switches, it can provide efficient power management.
2. **Electric vehicles and motor drives**
- In electric vehicles and motor drive applications, the high current capability and low on-resistance of this MOSFET enable it to effectively drive high-power motors. It is suitable for electric vehicle motor drive systems and high-power motor control modules to ensure efficient operation and long-term stable operation of the motor.
3. **Industrial automation**
- IRF8010SPBF-VB is also widely used in industrial automation systems, especially in scenarios where high-power loads need to be controlled. Its low RDS(ON) characteristics and high current handling capability make it suitable for industrial switches, motor control, and load switch modules.
4. **Inverter and UPS Systems**
- This MOSFET can be used in inverter and uninterruptible power supply (UPS) systems to provide stable high current handling capabilities. Its use in inverters can improve energy efficiency and ensure the reliability of UPS systems during power outages. Its high voltage withstand capability and low on-resistance help improve the overall performance of inverter and UPS systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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