Product introduction:
1. Product Introduction:
**IRF7N60-VB** is a high-voltage N-channel MOSFET in TO220 package, designed based on Plannar technology. Its maximum drain-source voltage (VDS) is 600V, suitable for high-voltage applications. The maximum gate-source voltage (VGS) of this MOSFET is ±30V, and the threshold voltage (Vth) is 3.5V, which allows it to be turned on at medium gate voltage. The on-resistance of IRF7N60-VB is 1070mΩ (@VGS=4.5V) and 780mΩ (@VGS=10V), which is not as low as some advanced Trench technology MOSFETs, but still provides reliable performance under high voltage conditions. The maximum drain current (ID) is 8A, making it suitable for applications requiring high voltage and medium current.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
|
780mΩ |
Plannar |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
600V |
|
3.5V |
8A |
|
Plannar |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Package type**: TO220
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 600V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- @VGS = 4.5V: 1070mΩ
- @VGS = 10V: 780mΩ
- **Maximum drain current (ID)**: 8A
- **Technology type**: Plannar
- **Power dissipation**: 94W
- **Operating temperature range**: -55°C to 150°C
Domain and module applications:
3. Application fields and module description:
1. **High-voltage power converter**:
The high drain-source voltage (600V) of IRF7N60-VB makes it excellent in high-voltage power converters. It is suitable for power conversion applications that need to handle high voltages, such as high-voltage DC-DC converters, inverters, and power supply modules. Although its on-resistance is relatively high, its reliability and stability are its main advantages in high-voltage applications.
2. **Power switch**:
In power switching applications, the high withstand voltage and moderate on-resistance of IRF7N60-VB enable it to handle high voltage and medium current loads. It is suitable for high-voltage switching circuits such as power switch modules in motor drives, power electronic equipment, and household appliances.
3. **Power management system**:
Due to its high withstand voltage capability, this MOSFET is also suitable for high-voltage protection and switching applications in power management systems. It can be used as an overvoltage protection switch in power management systems to ensure the safety and stability of the system under high voltage conditions.
4. **Automotive Electronics**:
In automotive electronic systems, the IRF7N60-VB can be used for switching applications in high voltage environments, such as automotive power management and load control modules. Its high withstand voltage characteristics enable it to handle the high voltage conditions that may be encountered in automobiles while providing reliable switching performance.
The high withstand voltage and medium on-resistance of the IRF7N60-VB make it a stable solution when dealing with high voltage and high power applications. Despite its high on-resistance, its reliability and durability still ensure stable operation of the system in situations where high voltage operation is required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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