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IRF7755TRPBF-VB Product details
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IRF7755TRPBF-VB MOSFET Product Introduction
**IRF7755TRPBF-VB** is a dual P-channel MOSFET packaged in **TSSOP8** and uses **Trench** technology. Designed for low-voltage applications, this MOSFET has a **-30V** drain-source voltage (VDS)**, suitable for use in circuits that require low voltage processing. Its **gate-source voltage (VGS)** range is ±20V, allowing a wide range of applications. The **threshold voltage (Vth)** of the MOSFET is **-1.7V**, and it provides a low **on-resistance (RDS(ON)** at different gate drive voltages: **55mΩ** at **VGS=4.5V** and **36mΩ** at **VGS=10V**. Its **drain current (ID)** is **-5.2A**, making it suitable for applications that handle medium power.
**IRF7755TRPBF-VB** is a dual P-channel MOSFET packaged in **TSSOP8** and uses **Trench** technology. Designed for low-voltage applications, this MOSFET has a **-30V** drain-source voltage (VDS)**, suitable for use in circuits that require low voltage processing. Its **gate-source voltage (VGS)** range is ±20V, allowing a wide range of applications. The **threshold voltage (Vth)** of the MOSFET is **-1.7V**, and it provides a low **on-resistance (RDS(ON)** at different gate drive voltages: **55mΩ** at **VGS=4.5V** and **36mΩ** at **VGS=10V**. Its **drain current (ID)** is **-5.2A**, making it suitable for applications that handle medium power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
IRF7755TRPBF-VB Detailed parameters
- **Package:** TSSOP8
- **Configuration:** Dual P-channel
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **Drain current (ID):** -5.2A
- **RDS(ON):** 55mΩ @ VGS = 4.5V
- **RDS(ON):** 36mΩ @ VGS = 10V
- **Technology:** Trench
- **Package:** TSSOP8
- **Configuration:** Dual P-channel
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **Drain current (ID):** -5.2A
- **RDS(ON):** 55mΩ @ VGS = 4.5V
- **RDS(ON):** 36mΩ @ VGS = 10V
- **Technology:** Trench
Domain and module applications：
Application Examples
**IRF7755TRPBF-VB** MOSFET excels in the following areas and modules:
1. **Load Switch:** Due to its dual P-channel configuration, the IRF7755TRPBF-VB is ideal for load switch applications, especially in circuits that require both positive and negative switch control. Its low on-resistance can effectively reduce power loss and improve switching efficiency, making it suitable for a variety of load switch control scenarios.
2. **Power Management:** This MOSFET is suitable for power management systems, especially in applications that require dual switch configurations, such as dual switch designs in power modules. Its low RDS(ON) helps improve the efficiency of power management and reduce heat generation.
3. **Battery Protection Circuit:** The IRF7755TRPBF-VB can be used as a protection switch in a battery protection circuit to prevent overcharging or over-discharging of the battery. Its dual P-channel design allows for more flexible current control, ensuring safe operation of the battery under various conditions.
4. **DC-DC Converter:** In a DC-DC converter, this MOSFET can be used as both a high-side and low-side switch, improving the efficiency and performance of the converter. Its dual P-channel design provides flexible switching control, making it suitable for applications that require medium current and voltage handling.
5. **Switching Power Supply:** In a switching power supply module, the IRF7755TRPBF-VB can effectively perform power switching control to ensure system stability and efficient operation. Its dual P-channel configuration allows for bidirectional current control in the power supply module, improving the overall performance of the switching power supply.
Due to its dual P-channel design and excellent switching performance, the IRF7755TRPBF-VB is suitable for multiple applications such as load switching, power management, battery protection, DC-DC converters, and switching power supplies.
**IRF7755TRPBF-VB** MOSFET excels in the following areas and modules:
1. **Load Switch:** Due to its dual P-channel configuration, the IRF7755TRPBF-VB is ideal for load switch applications, especially in circuits that require both positive and negative switch control. Its low on-resistance can effectively reduce power loss and improve switching efficiency, making it suitable for a variety of load switch control scenarios.
2. **Power Management:** This MOSFET is suitable for power management systems, especially in applications that require dual switch configurations, such as dual switch designs in power modules. Its low RDS(ON) helps improve the efficiency of power management and reduce heat generation.
3. **Battery Protection Circuit:** The IRF7755TRPBF-VB can be used as a protection switch in a battery protection circuit to prevent overcharging or over-discharging of the battery. Its dual P-channel design allows for more flexible current control, ensuring safe operation of the battery under various conditions.
4. **DC-DC Converter:** In a DC-DC converter, this MOSFET can be used as both a high-side and low-side switch, improving the efficiency and performance of the converter. Its dual P-channel design provides flexible switching control, making it suitable for applications that require medium current and voltage handling.
5. **Switching Power Supply:** In a switching power supply module, the IRF7755TRPBF-VB can effectively perform power switching control to ensure system stability and efficient operation. Its dual P-channel configuration allows for bidirectional current control in the power supply module, improving the overall performance of the switching power supply.
Due to its dual P-channel design and excellent switching performance, the IRF7755TRPBF-VB is suitable for multiple applications such as load switching, power management, battery protection, DC-DC converters, and switching power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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