中文
English
IRF7755GTRPBF-VB Product details
Back to previous pageProduct introduction：
IRF7755GTRPBF-VB MOSFET Product Introduction
The IRF7755GTRPBF-VB is a high-performance dual P-channel MOSFET in a TSSOP8 package designed for negative voltage applications. This MOSFET provides excellent switching performance and low power consumption, making it suitable for a variety of power management and power control systems. Its drain-source voltage (VDS) is -30V, which supports stable operation in a negative voltage environment. The gate-source voltage (VGS) range is ±20V, ensuring a wide range of drive voltage compatibility. The IRF7755GTRPBF-VB has a threshold voltage (Vth) of -1.7V and can be effectively turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 55mΩ at a VGS of 4.5V, which is further reduced to 36mΩ at a VGS of 10V, providing efficient current transfer. The maximum continuous drain current (ID) is -5.2A, which is suitable for high-efficiency switching and power control applications.
The IRF7755GTRPBF-VB is a high-performance dual P-channel MOSFET in a TSSOP8 package designed for negative voltage applications. This MOSFET provides excellent switching performance and low power consumption, making it suitable for a variety of power management and power control systems. Its drain-source voltage (VDS) is -30V, which supports stable operation in a negative voltage environment. The gate-source voltage (VGS) range is ±20V, ensuring a wide range of drive voltage compatibility. The IRF7755GTRPBF-VB has a threshold voltage (Vth) of -1.7V and can be effectively turned on at a lower gate voltage. Its on-resistance (RDS(ON)) is 55mΩ at a VGS of 4.5V, which is further reduced to 36mΩ at a VGS of 10V, providing efficient current transfer. The maximum continuous drain current (ID) is -5.2A, which is suitable for high-efficiency switching and power control applications.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
- **Package:** TSSOP8
- **Configuration:** Dual P-channel MOSFET (P+P-Channel)
- **VDS (drain-source voltage):** -30V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** -1.7V
- **RDS(ON):** 55mΩ @ VGS = 4.5V
- **RDS(ON):** 36mΩ @ VGS = 10V
- **ID (continuous leakage current):** -5.2A
- **Technology:** Trench technology, providing low power consumption and efficient switching performance.
- **Package:** TSSOP8
- **Configuration:** Dual P-channel MOSFET (P+P-Channel)
- **VDS (drain-source voltage):** -30V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** -1.7V
- **RDS(ON):** 55mΩ @ VGS = 4.5V
- **RDS(ON):** 36mΩ @ VGS = 10V
- **ID (continuous leakage current):** -5.2A
- **Technology:** Trench technology, providing low power consumption and efficient switching performance.
Domain and module applications：
Application Examples
1. **Negative Voltage Power Switch:**
The negative drain-source voltage (-30V) of IRF7755GTRPBF-VB makes it very suitable for negative voltage power switch applications. It can provide reliable switching control in a negative voltage environment to ensure the stable operation of the power system.
2. **Battery Protection and Management System:**
In the battery protection and management system, the low on-resistance and high current carrying capacity of this MOSFET enable it to effectively control the battery charging and discharging process. It helps improve the overall efficiency of the system and ensure the safe use of the battery.
3. **DC-DC Converter:**
The efficient switching performance and low power consumption characteristics of IRF7755GTRPBF-VB make it suitable for DC-DC converters. It can reduce power loss and improve conversion efficiency during voltage conversion, and is widely used in various power conversion modules.
4. **Load switch control: **
Due to its dual P-channel configuration, the IRF7755GTRPBF-VB is suitable for complex load switch control circuits, such as load control and power switching in industrial equipment and consumer electronics. Its high current handling capability and low conduction loss ensure high efficiency and reliability of load switching.
These features make the IRF7755GTRPBF-VB an ideal choice for negative voltage applications and high-efficiency switch control, especially in power management systems that require high current handling and low power consumption.
1. **Negative Voltage Power Switch:**
The negative drain-source voltage (-30V) of IRF7755GTRPBF-VB makes it very suitable for negative voltage power switch applications. It can provide reliable switching control in a negative voltage environment to ensure the stable operation of the power system.
2. **Battery Protection and Management System:**
In the battery protection and management system, the low on-resistance and high current carrying capacity of this MOSFET enable it to effectively control the battery charging and discharging process. It helps improve the overall efficiency of the system and ensure the safe use of the battery.
3. **DC-DC Converter:**
The efficient switching performance and low power consumption characteristics of IRF7755GTRPBF-VB make it suitable for DC-DC converters. It can reduce power loss and improve conversion efficiency during voltage conversion, and is widely used in various power conversion modules.
4. **Load switch control: **
Due to its dual P-channel configuration, the IRF7755GTRPBF-VB is suitable for complex load switch control circuits, such as load control and power switching in industrial equipment and consumer electronics. Its high current handling capability and low conduction loss ensure high efficiency and reliability of load switching.
These features make the IRF7755GTRPBF-VB an ideal choice for negative voltage applications and high-efficiency switch control, especially in power management systems that require high current handling and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
