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IRF7754TRPBF-VB Product details
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IRF7754TRPBF-VB MOSFET Product Introduction:
**IRF7754TRPBF-VB** is a high-performance **dual-stage P-channel and N-channel MOSFET**, designed in **TSSOP8** package, designed for applications requiring high integration and compact design. This MOSFET supports **-20V** drain-source voltage (VDS)** and ±20V **gate-source voltage (VGS)**, and performs well in power management and switching applications. Its **threshold voltage (Vth)** is **-1.2V**, allowing the MOSFET to be reliably turned on at a lower gate drive voltage. The MOSFET has an **RDS(ON)** of **18mΩ** at **4.5V gate-source voltage** and **13mΩ** at **10V gate-source voltage**, with a lower on-resistance, thereby reducing conduction losses. With a leakage current (ID) rating of -7.5A and Trench technology, it improves switching speed and thermal management performance, making it suitable for a variety of power management and switching applications.
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**IRF7754TRPBF-VB** is a high-performance **dual-stage P-channel and N-channel MOSFET**, designed in **TSSOP8** package, designed for applications requiring high integration and compact design. This MOSFET supports **-20V** drain-source voltage (VDS)** and ±20V **gate-source voltage (VGS)**, and performs well in power management and switching applications. Its **threshold voltage (Vth)** is **-1.2V**, allowing the MOSFET to be reliably turned on at a lower gate drive voltage. The MOSFET has an **RDS(ON)** of **18mΩ** at **4.5V gate-source voltage** and **13mΩ** at **10V gate-source voltage**, with a lower on-resistance, thereby reducing conduction losses. With a leakage current (ID) rating of -7.5A and Trench technology, it improves switching speed and thermal management performance, making it suitable for a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description:
- **Package: ** TSSOP8
- **Configuration: ** Dual-stage P-channel and N-channel MOSFET
- **Drain-source voltage (VDS): ** -20V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.2V
- **RDS(ON): ** 18mΩ @ VGS = 4.5V
13mΩ @ VGS = 10V
- **Drain current (ID): ** -7.5A
- **Technology: ** Trench
- **Switching speed: ** High, suitable for fast switching applications
- **Power consumption: ** Low, optimize energy efficiency and thermal management
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- **Package: ** TSSOP8
- **Configuration: ** Dual-stage P-channel and N-channel MOSFET
- **Drain-source voltage (VDS): ** -20V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.2V
- **RDS(ON): ** 18mΩ @ VGS = 4.5V
13mΩ @ VGS = 10V
- **Drain current (ID): ** -7.5A
- **Technology: ** Trench
- **Switching speed: ** High, suitable for fast switching applications
- **Power consumption: ** Low, optimize energy efficiency and thermal management
---
Domain and module applications：
Application Examples:
1. **Power Management System:**
**IRF7754TRPBF-VB** is ideal for **DC-DC converters** and **power management modules**. Its dual-stage configuration allows for simultaneous handling of high-voltage and low-voltage switches, making it suitable for complex power management systems and effectively improving overall power efficiency and stability.
2. **Load Switch:**
In **load switch** applications, the IRF7754TRPBF-VB can be used to control the start and stop of loads, especially in applications that require high performance and compact design, such as **power window** and **power seat** control systems. Its low RDS(ON) and high switching speed can effectively improve system performance and efficiency.
3. **Battery Management System:**
This MOSFET performs well in **battery management systems**. Its low on-resistance and high current handling capability make it ideal for **battery protection circuits**, which can prevent overcurrent and overvoltage, protecting the safety and long life of the battery system.
4. **Miniaturized Electronic Devices:**
**The **TSSOP8** package design of the **IRF7754TRPBF-VB** makes it very suitable for **miniaturized electronic devices**, such as **portable devices** and **mobile electronics**. Its high integration and compact package design make it an ideal choice for space-constrained applications.
These application examples demonstrate the wide applicability of the IRF7754TRPBF-VB in power management, load switching, battery protection, and miniaturized electronic devices, especially in systems that require high performance and compact design.
1. **Power Management System:**
**IRF7754TRPBF-VB** is ideal for **DC-DC converters** and **power management modules**. Its dual-stage configuration allows for simultaneous handling of high-voltage and low-voltage switches, making it suitable for complex power management systems and effectively improving overall power efficiency and stability.
2. **Load Switch:**
In **load switch** applications, the IRF7754TRPBF-VB can be used to control the start and stop of loads, especially in applications that require high performance and compact design, such as **power window** and **power seat** control systems. Its low RDS(ON) and high switching speed can effectively improve system performance and efficiency.
3. **Battery Management System:**
This MOSFET performs well in **battery management systems**. Its low on-resistance and high current handling capability make it ideal for **battery protection circuits**, which can prevent overcurrent and overvoltage, protecting the safety and long life of the battery system.
4. **Miniaturized Electronic Devices:**
**The **TSSOP8** package design of the **IRF7754TRPBF-VB** makes it very suitable for **miniaturized electronic devices**, such as **portable devices** and **mobile electronics**. Its high integration and compact package design make it an ideal choice for space-constrained applications.
These application examples demonstrate the wide applicability of the IRF7754TRPBF-VB in power management, load switching, battery protection, and miniaturized electronic devices, especially in systems that require high performance and compact design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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