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IRF7754GTRPBF-VB Product details
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Product Introduction
IRF7754GTRPBF-VB is a dual-channel P-channel power MOSFET packaged as TSSOP8. It includes two P-channel MOSFETs with a drain-source voltage (VDS) of -20V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of each MOSFET is -1.2V, which can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of IRF7754GTRPBF-VB is 18mΩ@VGS=4.5V and 13mΩ@VGS=10V, respectively, and the maximum drain current (ID) is -7.5A. This MOSFET uses Trench technology, providing efficient switching performance and low power consumption characteristics, and is particularly suitable for compact design and high-efficiency application scenarios.
IRF7754GTRPBF-VB is a dual-channel P-channel power MOSFET packaged as TSSOP8. It includes two P-channel MOSFETs with a drain-source voltage (VDS) of -20V and a gate-source voltage (VGS) of ±20V. The threshold voltage (Vth) of each MOSFET is -1.2V, which can be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of IRF7754GTRPBF-VB is 18mΩ@VGS=4.5V and 13mΩ@VGS=10V, respectively, and the maximum drain current (ID) is -7.5A. This MOSFET uses Trench technology, providing efficient switching performance and low power consumption characteristics, and is particularly suitable for compact design and high-efficiency application scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
| Parameter| Value|
|---------------------|-----------------------|
| Device model| IRF7754GTRPBF-VB |
| Package| TSSOP8 |
| Configuration| Dual P+P channel|
| Drain-source voltage (VDS) | -20V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.2V |
| On-resistance (RDS(ON)) | 18mΩ @ VGS=4.5V |
| | 13mΩ @ VGS=10V |
| Drain current (ID) | -7.5A |
| Technology| Trench |
| Parameter| Value|
|---------------------|-----------------------|
| Device model| IRF7754GTRPBF-VB |
| Package| TSSOP8 |
| Configuration| Dual P+P channel|
| Drain-source voltage (VDS) | -20V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.2V |
| On-resistance (RDS(ON)) | 18mΩ @ VGS=4.5V |
| | 13mΩ @ VGS=10V |
| Drain current (ID) | -7.5A |
| Technology| Trench |
Domain and module applications：
Applications and Modules
1. **Power Management**
- The IRF7754GTRPBF-VB is ideal for use in power management modules, especially in applications where multiple power paths need to be controlled simultaneously. Its dual P-channel MOSFET configuration can be used for efficient power switching, providing stable current control, reducing power consumption, and improving the overall efficiency of the power management system.
2. **DC-DC Converter**
- Due to its low RDS(ON) value and high current handling capability, the IRF7754GTRPBF-VB is an ideal choice for DC-DC converters. The dual P-channel MOSFET configuration can be used for efficient switching, improving the performance and energy efficiency of the converter, and is particularly suitable for power supply designs that require compactness and efficiency.
3. **Load Switch**
- In load switch applications, the IRF7754GTRPBF-VB provides efficient switching capabilities to effectively control the load. Its low on-resistance reduces the power loss generated during the switching process, and is suitable for load switch systems that require high efficiency and low power consumption.
4. **Industrial and automotive applications**
- This MOSFET is also suitable for industrial control and automotive electronic systems. In these fields, the IRF7754GTRPBF-VB can be used in various drive and control circuits, and its dual MOSFET design allows more functions to be implemented in the same package, which is very suitable for applications with limited space and requiring efficient performance, such as automation systems and automotive power management modules.
1. **Power Management**
- The IRF7754GTRPBF-VB is ideal for use in power management modules, especially in applications where multiple power paths need to be controlled simultaneously. Its dual P-channel MOSFET configuration can be used for efficient power switching, providing stable current control, reducing power consumption, and improving the overall efficiency of the power management system.
2. **DC-DC Converter**
- Due to its low RDS(ON) value and high current handling capability, the IRF7754GTRPBF-VB is an ideal choice for DC-DC converters. The dual P-channel MOSFET configuration can be used for efficient switching, improving the performance and energy efficiency of the converter, and is particularly suitable for power supply designs that require compactness and efficiency.
3. **Load Switch**
- In load switch applications, the IRF7754GTRPBF-VB provides efficient switching capabilities to effectively control the load. Its low on-resistance reduces the power loss generated during the switching process, and is suitable for load switch systems that require high efficiency and low power consumption.
4. **Industrial and automotive applications**
- This MOSFET is also suitable for industrial control and automotive electronic systems. In these fields, the IRF7754GTRPBF-VB can be used in various drive and control circuits, and its dual MOSFET design allows more functions to be implemented in the same package, which is very suitable for applications with limited space and requiring efficient performance, such as automation systems and automotive power management modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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