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IRF7752GTRPBF-VB Product details
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1. Product Introduction:
**IRF7752GTRPBF-VB** is a high-performance common-source N-channel MOSFET in TSSOP8 package. This MOSFET adopts Trench technology and is designed for low-voltage, high-efficiency switching applications. It has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, providing excellent current handling capability. The threshold voltage (Vth) of IRF7752GTRPBF-VB is 1.7V, and the low on-resistance ensures high efficiency and low power consumption. Its dual N-channel design enables it to provide excellent performance in applications requiring efficient switching and dual-channel operation.
**IRF7752GTRPBF-VB** is a high-performance common-source N-channel MOSFET in TSSOP8 package. This MOSFET adopts Trench technology and is designed for low-voltage, high-efficiency switching applications. It has a maximum drain-source voltage (VDS) of 30V and a gate-source voltage (VGS) of ±20V, providing excellent current handling capability. The threshold voltage (Vth) of IRF7752GTRPBF-VB is 1.7V, and the low on-resistance ensures high efficiency and low power consumption. Its dual N-channel design enables it to provide excellent performance in applications requiring efficient switching and dual-channel operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. Detailed parameter description:
- **Package type**: TSSOP8
- **Configuration**: Common source N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS = 4.5V: 19mΩ
- @VGS = 10V: 12mΩ
- **Maximum drain current (ID)**: 8.6A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TSSOP8
- **Configuration**: Common source N-channel MOSFET
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- @VGS = 4.5V: 19mΩ
- @VGS = 10V: 12mΩ
- **Maximum drain current (ID)**: 8.6A
- **Technology type**: Trench
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
3. Application fields and module description:
1. **Power management and DC-DC converters**:
The low on-resistance and dual N-channel design of the IRF7752GTRPBF-VB make it ideal for DC-DC converters in power management systems. This configuration can handle multiple current paths on the same chip, improve conversion efficiency, and reduce energy loss. It is widely used in computer power supplies, communication equipment, and high-efficiency power modules, and can provide stable and reliable power management solutions.
2. **Load switching and power distribution**:
The efficient switching characteristics and dual-channel design of this MOSFET make it suitable for load switching applications such as automation equipment and battery management systems. Its low on-resistance reduces power consumption during load switching operations and improves overall system efficiency. It is especially suitable for power distribution modules that require high-frequency switching and can efficiently manage multiple loads.
3. **Motor Drive and Control Systems**:
The IRF7752GTRPBF-VB excels in small motor drive applications and is suitable for motor drive modules in power tools, electric toys and home appliances due to its low RDS(ON) and high current handling capability. Its efficient switching performance helps improve the operating efficiency and reliability of motors.
4. **Automotive Electronics**:
In automotive electronic systems, this MOSFET is suitable for a variety of switching and control modules, including battery management, power switching and load control. Its high current handling capability and stability enable it to cope with high load requirements in automotive environments, improving the overall performance and reliability of automotive electronic systems.
The design of the IRF7752GTRPBF-VB enables it to provide efficient and reliable switching solutions in areas such as power management, load control and motor drive to meet a variety of application needs.
1. **Power management and DC-DC converters**:
The low on-resistance and dual N-channel design of the IRF7752GTRPBF-VB make it ideal for DC-DC converters in power management systems. This configuration can handle multiple current paths on the same chip, improve conversion efficiency, and reduce energy loss. It is widely used in computer power supplies, communication equipment, and high-efficiency power modules, and can provide stable and reliable power management solutions.
2. **Load switching and power distribution**:
The efficient switching characteristics and dual-channel design of this MOSFET make it suitable for load switching applications such as automation equipment and battery management systems. Its low on-resistance reduces power consumption during load switching operations and improves overall system efficiency. It is especially suitable for power distribution modules that require high-frequency switching and can efficiently manage multiple loads.
3. **Motor Drive and Control Systems**:
The IRF7752GTRPBF-VB excels in small motor drive applications and is suitable for motor drive modules in power tools, electric toys and home appliances due to its low RDS(ON) and high current handling capability. Its efficient switching performance helps improve the operating efficiency and reliability of motors.
4. **Automotive Electronics**:
In automotive electronic systems, this MOSFET is suitable for a variety of switching and control modules, including battery management, power switching and load control. Its high current handling capability and stability enable it to cope with high load requirements in automotive environments, improving the overall performance and reliability of automotive electronic systems.
The design of the IRF7752GTRPBF-VB enables it to provide efficient and reliable switching solutions in areas such as power management, load control and motor drive to meet a variety of application needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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