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IRF7751TRPBF-VB Product details
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Product Introduction — IRF7751TRPBF-VB
The IRF7751TRPBF-VB is a high-performance dual P-channel MOSFET in TSSOP8 package, designed for applications requiring high switching efficiency and high power density. This MOSFET integrates two P-channel channels, based on advanced trench technology, with low on-resistance and excellent switching performance. The IRF7751TRPBF-VB is particularly suitable for load switching, power management and power control circuits, and can provide stable performance and high-efficiency operation.
The IRF7751TRPBF-VB is a high-performance dual P-channel MOSFET in TSSOP8 package, designed for applications requiring high switching efficiency and high power density. This MOSFET integrates two P-channel channels, based on advanced trench technology, with low on-resistance and excellent switching performance. The IRF7751TRPBF-VB is particularly suitable for load switching, power management and power control circuits, and can provide stable performance and high-efficiency operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description - IRF7751TRPBF-VB
- **Package type**: TSSOP8
- **Configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ (VGS=4.5V)
- 36mΩ (VGS=10V)
- **Drain current (ID)**: -5.2A
- **Technology**: Trench technology
- **Package type**: TSSOP8
- **Configuration**: Dual P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ (VGS=4.5V)
- 36mΩ (VGS=10V)
- **Drain current (ID)**: -5.2A
- **Technology**: Trench technology
Domain and module applications：
Applications and module examples
1. **Power management**
The IRF7751TRPBF-VB provides reliable performance in power management circuits, especially in applications requiring dual P-channel MOSFETs. Its low on-resistance and excellent switching characteristics make it suitable for use in power switches and regulators, improving the efficiency and stability of power systems.
2. **Load switch**
Due to its dual-channel design, the IRF7751TRPBF-VB performs well in load switch applications. It can effectively switch and control loads and is widely used in various switching circuits such as motor drives and battery management systems to ensure efficient control and reliable switching of loads.
3. **Power control circuits**
In high-efficiency power control circuits such as LED drivers and power converters, the dual P-channel configuration and low on-resistance of the IRF7751TRPBF-VB enable it to provide efficient power management. It is designed for applications that require precise switch control and high power density, improving the system's energy efficiency and response speed.
4. **Battery Management System**
IRF7751TRPBF-VB is also suitable for switch control in battery management systems, especially in battery protection circuits that require dual P-channel MOSFETs. It can effectively control the battery's charge and discharge process, protect the battery from overcurrent, and improve battery performance and service life.
1. **Power management**
The IRF7751TRPBF-VB provides reliable performance in power management circuits, especially in applications requiring dual P-channel MOSFETs. Its low on-resistance and excellent switching characteristics make it suitable for use in power switches and regulators, improving the efficiency and stability of power systems.
2. **Load switch**
Due to its dual-channel design, the IRF7751TRPBF-VB performs well in load switch applications. It can effectively switch and control loads and is widely used in various switching circuits such as motor drives and battery management systems to ensure efficient control and reliable switching of loads.
3. **Power control circuits**
In high-efficiency power control circuits such as LED drivers and power converters, the dual P-channel configuration and low on-resistance of the IRF7751TRPBF-VB enable it to provide efficient power management. It is designed for applications that require precise switch control and high power density, improving the system's energy efficiency and response speed.
4. **Battery Management System**
IRF7751TRPBF-VB is also suitable for switch control in battery management systems, especially in battery protection circuits that require dual P-channel MOSFETs. It can effectively control the battery's charge and discharge process, protect the battery from overcurrent, and improve battery performance and service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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