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IRF7751GTR-VB Product details
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IRF7751GTR-VB MOSFET Product Introduction
**IRF7751GTR-VB** is a high-performance bipolar P-channel and N-channel power MOSFET in **TSSOP8** package. It has a drain-source voltage (VDS) of -30V and is equipped with a bipolar configuration, that is, it includes a P-channel and an N-channel MOSFET. The threshold voltage (Vth) of this MOSFET is -1.7V, which is suitable for applications that require a lower gate voltage. The IRF7751GTR-VB uses trench technology (Trench), which provides excellent switching performance and low on-resistance, and is suitable for a variety of high-efficiency power switching and power management applications.
**IRF7751GTR-VB** is a high-performance bipolar P-channel and N-channel power MOSFET in **TSSOP8** package. It has a drain-source voltage (VDS) of -30V and is equipped with a bipolar configuration, that is, it includes a P-channel and an N-channel MOSFET. The threshold voltage (Vth) of this MOSFET is -1.7V, which is suitable for applications that require a lower gate voltage. The IRF7751GTR-VB uses trench technology (Trench), which provides excellent switching performance and low on-resistance, and is suitable for a variety of high-efficiency power switching and power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
IRF7751GTR-VB detailed parameters
- **Package**: TSSOP8
- **Configuration**: Dual P-channel + Dual N-channel MOSFET
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V (typical value)
- **RDS(ON) (on-resistance)**:
- 55mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **ID (continuous leakage current)**: -5.2A
- **Technology**: Trench technology
- **Package**: TSSOP8
- **Configuration**: Dual P-channel + Dual N-channel MOSFET
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V (typical value)
- **RDS(ON) (on-resistance)**:
- 55mΩ @ VGS = 4.5V
- 36mΩ @ VGS = 10V
- **ID (continuous leakage current)**: -5.2A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
1. **Load Switch**: The bipolar configuration and low on-resistance of the IRF7751GTR-VB make it ideal for load switch applications. It can provide reliable switching performance in bidirectional load control, such as load switches in battery management systems, home appliances, and automotive electronics.
2. **DC-DC Converter**: Due to its excellent switching characteristics, this MOSFET can be used in DC-DC converters, especially where bipolar switching control is required. It is suitable for power converters in various electronic devices, such as mobile devices, laptops, and digital cameras, providing efficient power management.
3. **Power Management System**: The high efficiency and bipolar configuration of the IRF7751GTR-VB make it suitable for complex power management systems. It can be used in power management ICs and switching power modules to help achieve efficient conversion and regulation of power, and is suitable for computer power supplies, communication equipment, and industrial power systems.
4. **Battery protection circuit**: In the battery protection circuit, this MOSFET can be used to protect the battery from over-current and over-voltage, especially in applications that require bidirectional switch control. It is suitable for battery management systems in various portable devices, such as smartphones, tablets, and other charging devices.
With its low on-resistance and bipolar configuration, the IRF7751GTR-VB is suitable for a variety of high-efficiency and complex switching applications, providing stable performance and flexible solutions for power management and load control systems.
1. **Load Switch**: The bipolar configuration and low on-resistance of the IRF7751GTR-VB make it ideal for load switch applications. It can provide reliable switching performance in bidirectional load control, such as load switches in battery management systems, home appliances, and automotive electronics.
2. **DC-DC Converter**: Due to its excellent switching characteristics, this MOSFET can be used in DC-DC converters, especially where bipolar switching control is required. It is suitable for power converters in various electronic devices, such as mobile devices, laptops, and digital cameras, providing efficient power management.
3. **Power Management System**: The high efficiency and bipolar configuration of the IRF7751GTR-VB make it suitable for complex power management systems. It can be used in power management ICs and switching power modules to help achieve efficient conversion and regulation of power, and is suitable for computer power supplies, communication equipment, and industrial power systems.
4. **Battery protection circuit**: In the battery protection circuit, this MOSFET can be used to protect the battery from over-current and over-voltage, especially in applications that require bidirectional switch control. It is suitable for battery management systems in various portable devices, such as smartphones, tablets, and other charging devices.
With its low on-resistance and bipolar configuration, the IRF7751GTR-VB is suitable for a variety of high-efficiency and complex switching applications, providing stable performance and flexible solutions for power management and load control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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