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IRF7751GTRPBF-VB Product details

Product introduction:

1. IRF7751GTRPBF-VB Product Introduction
IRF7751GTRPBF-VB is a high-efficiency dual P-channel MOSFET packaged in TSSOP8, designed for high-efficiency switching and negative voltage applications. This MOSFET is equipped with two P-channel MOSFETs with a maximum drain-source voltage (VDS) of -30V, making it suitable for switching and control in negative voltage environments. Its threshold voltage (Vth) is -1.7V, allowing it to turn on at a lower gate voltage. The on-resistance (RDS(ON)) of the IRF7751GTRPBF-VB is 55mΩ@VGS=4.5V and 36mΩ@VGS=10V, which provides low switching losses and high efficiency compared to its dual MOSFET design. Using the Trench process, this MOSFET has excellent switching characteristics and thermal management capabilities, and is suitable for a variety of high-efficiency switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Dual-P+P
2. IRF7751GTRPBF-VB Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **Drain current (ID)**: -5.2A
- **Technology**: Trench process
- **Switching characteristics**: Suitable for high-efficiency negative voltage switching applications
- **Power loss**: Low on-resistance helps reduce switching losses and improve system efficiency

Domain and module applications:

3. Application fields and module examples
1. **Power switch and protection circuit**:
IRF7751GTRPBF-VB is suitable for power switch and protection circuit, especially in applications requiring negative voltage control. For example, it can be used as a switch for DC-DC converters, helping to effectively manage the power conversion process and provide power protection against overvoltage or short circuit.

2. **Load switch**:
In consumer electronics or other applications requiring negative voltage load switching, this MOSFET can be used as a load switch to provide efficient switching control. Its dual MOSFET design makes it particularly suitable for designs that require high-density packaging while being able to handle larger currents.

3. **Motor drive**:
In motor drive systems, IRF7751GTRPBF-VB can be used for switching control of negative voltage motors. Due to its low on-resistance and high current capability, this MOSFET can effectively control the start-up and operation of the motor, ensuring the efficiency and stability of the motor.

4. **Battery Management System**:
In the battery management system, this MOSFET can be used for battery switching and protection. For example, during the charging and discharging process of lithium-ion batteries, the IRF7751GTRPBF-VB can provide efficient switching functions to ensure battery safety and extend battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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