Featured Model

IRF7750TRPBF-VB Product details

Product introduction:

1. Product Introduction
IRF7750TRPBF-VB is a dual P-channel MOSFET in TSSOP8 package. It is designed for switching applications that need to handle both positive and negative voltages. This MOSFET has a drain-source voltage (VDS) of -30V, which is suitable for negative voltage environments. The threshold voltage (Vth) is -1.7V, which can effectively turn on at a lower gate-source voltage. The IRF7750TRPBF-VB has a low on-resistance (RDS(ON)), which is 55mΩ at VGS=4.5V and drops to 36mΩ at VGS=10V, and the maximum drain current (ID) is -5.2A. Using trench technology, this MOSFET provides high-efficiency switching performance and is suitable for various power management and load switching applications.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Dual-P+P
2. Detailed parameter description
- **Package type**: TSSOP8
- **MOSFET type**: Dual P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 55mΩ @ VGS=4.5V
- 36mΩ @ VGS=10V
- **Maximum drain current (ID)**: -5.2A
- **Technology type**: Trench technology
- **Power dissipation**: Depends on the actual heat dissipation design
- **Switching speed**: The specific performance is related to the circuit design and driving conditions
- **Input capacitance (Ciss)**: Refer to the detailed data sheet

Domain and module applications:

3. Application Fields and Modules
The dual P-channel design, low on-resistance and moderate current capability of the IRF7750TRPBF-VB make it widely used in multiple application scenarios. Here are some specific application examples:

1. **Power Management**: In power management systems, this MOSFET can be used for switching and regulating negative voltage power supplies, such as DC-DC converters and power regulators. Its dual P-channel design allows for more flexible power management and more efficient power conversion.

2. **Load Switch**: In load switch applications, the IRF7750TRPBF-VB can be used as a load control switch, suitable for switch control in home appliances, consumer electronics and industrial equipment. This dual MOSFET configuration provides higher flexibility and high-efficiency load control solutions.

3. **Battery Management**: When used in battery switches and protection circuits in battery management systems, this MOSFET can handle negative voltages and provide efficient switching performance, optimize the battery charging and discharging process, and extend battery life.

4. **Inverters and Power Tools**: In inverters and power tools that require negative voltage, the IRF7750TRPBF-VB can reliably switch loads, improving the overall efficiency and performance of the system.

With its dual P-channel design, low on-resistance and high current handling capability, the IRF7750TRPBF-VB is suitable for power management, load switching, battery management and negative voltage applications, providing efficient and reliable switching solutions for a variety of electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat