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IRF7750GTRPBF-VB Product details
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IRF7750GTRPBF-VB MOSFET Product Introduction
**IRF7750GTRPBF-VB** is a dual P-channel MOSFET packaged in **TSSOP8** and adopts **Trench** technology. This MOSFET has a **-30V** drain-source voltage (VDS)**, which is suitable for low-voltage applications. It is configured with two P-channel MOSFETs, enabling it to provide high efficiency in circuits requiring dual switches. The **gate-source voltage (VGS)** range of the MOSFET is ±20V, providing operational flexibility. Its **threshold voltage (Vth)** is **-1.7V**, and it has a moderate **on-resistance (RDS(ON))** at different gate drive voltages: **55mΩ** at **VGS=4.5V** and **36mΩ** at **VGS=10V**. Its **drain current (ID)** is **-5.2A**, which is suitable for applications that handle medium power.
**IRF7750GTRPBF-VB** is a dual P-channel MOSFET packaged in **TSSOP8** and adopts **Trench** technology. This MOSFET has a **-30V** drain-source voltage (VDS)**, which is suitable for low-voltage applications. It is configured with two P-channel MOSFETs, enabling it to provide high efficiency in circuits requiring dual switches. The **gate-source voltage (VGS)** range of the MOSFET is ±20V, providing operational flexibility. Its **threshold voltage (Vth)** is **-1.7V**, and it has a moderate **on-resistance (RDS(ON))** at different gate drive voltages: **55mΩ** at **VGS=4.5V** and **36mΩ** at **VGS=10V**. Its **drain current (ID)** is **-5.2A**, which is suitable for applications that handle medium power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
IRF7750GTRPBF-VB Detailed parameters
- **Package:** TSSOP8
- **Configuration:** Dual P-channel
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **Drain current (ID):** -5.2A
- **RDS(ON):** 55mΩ @ VGS = 4.5V
- **RDS(ON):** 36mΩ @ VGS = 10V
- **Technology:** Trench
- **Package:** TSSOP8
- **Configuration:** Dual P-channel
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **Drain current (ID):** -5.2A
- **RDS(ON):** 55mΩ @ VGS = 4.5V
- **RDS(ON):** 36mΩ @ VGS = 10V
- **Technology:** Trench
Domain and module applications：
Application Examples
**IRF7750GTRPBF-VB** MOSFET performs well in the following fields and modules:
1. **Load Switch:** Due to its dual P-channel configuration, the IRF7750GTRPBF-VB is well suited for load switch applications, especially in circuits that require both positive and negative switch control. Its low on-resistance helps reduce power loss and improves switching efficiency.
2. **Power Management:** This MOSFET is suitable for use in power management systems, especially in situations where bidirectional switch control is required, such as the dual switch configuration in power modules. Its moderate on-resistance can improve the overall efficiency of the system.
3. **Battery Protection Circuit:** In the battery protection circuit, the IRF7750GTRPBF-VB can be used as a switch component to help implement overcharge and over-discharge protection for the battery. The dual P-channel MOSFET configuration allows for more flexible switch control and provides effective protection.
4. **DC-DC Converter:** In DC-DC converter, the dual P-channel MOSFET configuration can be used as high-side and low-side switches to improve conversion efficiency and system stability. Moderate current handling capability and low RDS(ON) characteristics make it suitable for medium power conversion applications.
5. **Switching Power Supply:** In switching power supply modules, IRF7750GTRPBF-VB can effectively control the power switch to ensure high efficiency and stable operation of the power module. Its dual P-channel MOSFET design is suitable for bidirectional current control and switching functions.
Due to its dual P-channel design and good switching performance, this MOSFET is suitable for multiple applications such as load switching, power management, battery protection, DC-DC converters and switching power supplies.
**IRF7750GTRPBF-VB** MOSFET performs well in the following fields and modules:
1. **Load Switch:** Due to its dual P-channel configuration, the IRF7750GTRPBF-VB is well suited for load switch applications, especially in circuits that require both positive and negative switch control. Its low on-resistance helps reduce power loss and improves switching efficiency.
2. **Power Management:** This MOSFET is suitable for use in power management systems, especially in situations where bidirectional switch control is required, such as the dual switch configuration in power modules. Its moderate on-resistance can improve the overall efficiency of the system.
3. **Battery Protection Circuit:** In the battery protection circuit, the IRF7750GTRPBF-VB can be used as a switch component to help implement overcharge and over-discharge protection for the battery. The dual P-channel MOSFET configuration allows for more flexible switch control and provides effective protection.
4. **DC-DC Converter:** In DC-DC converter, the dual P-channel MOSFET configuration can be used as high-side and low-side switches to improve conversion efficiency and system stability. Moderate current handling capability and low RDS(ON) characteristics make it suitable for medium power conversion applications.
5. **Switching Power Supply:** In switching power supply modules, IRF7750GTRPBF-VB can effectively control the power switch to ensure high efficiency and stable operation of the power module. Its dual P-channel MOSFET design is suitable for bidirectional current control and switching functions.
Due to its dual P-channel design and good switching performance, this MOSFET is suitable for multiple applications such as load switching, power management, battery protection, DC-DC converters and switching power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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