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IRF7707TRPBF-VB Product details
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IRF7707TRPBF-VB MOSFET Product Introduction
The IRF7707TRPBF-VB is a high-performance single P-channel MOSFET in a TSSOP8 package, designed for low-voltage, high-efficiency switching applications. This MOSFET provides excellent switching performance and low power consumption characteristics, and its drain-source voltage (VDS) is -30V, which is suitable for negative voltage environments. The gate-source voltage (VGS) range is ±20V, ensuring a wide range of drive voltage compatibility. The threshold voltage (Vth) is -1.7V, supporting low gate drive voltage operation. The on-resistance (RDS(ON)) of the IRF7707TRPBF-VB is 20mΩ at VGS of 4.5V, and is further reduced to 16mΩ at VGS of 10V, providing efficient current transmission and low power consumption. Its maximum continuous drain current (ID) is -9A, suitable for high-efficiency switching and power control applications.
The IRF7707TRPBF-VB is a high-performance single P-channel MOSFET in a TSSOP8 package, designed for low-voltage, high-efficiency switching applications. This MOSFET provides excellent switching performance and low power consumption characteristics, and its drain-source voltage (VDS) is -30V, which is suitable for negative voltage environments. The gate-source voltage (VGS) range is ±20V, ensuring a wide range of drive voltage compatibility. The threshold voltage (Vth) is -1.7V, supporting low gate drive voltage operation. The on-resistance (RDS(ON)) of the IRF7707TRPBF-VB is 20mΩ at VGS of 4.5V, and is further reduced to 16mΩ at VGS of 10V, providing efficient current transmission and low power consumption. Its maximum continuous drain current (ID) is -9A, suitable for high-efficiency switching and power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
- **Package:** TSSOP8
- **Configuration:** Single P-channel MOSFET
- **VDS (drain-source voltage):** -30V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** -1.7V
- **RDS(ON):** 20mΩ @ VGS = 4.5V
- **RDS(ON):** 16mΩ @ VGS = 10V
- **ID (continuous leakage current):** -9A
- **Technology:** Trench technology, providing low power consumption and efficient switching performance.
- **Package:** TSSOP8
- **Configuration:** Single P-channel MOSFET
- **VDS (drain-source voltage):** -30V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** -1.7V
- **RDS(ON):** 20mΩ @ VGS = 4.5V
- **RDS(ON):** 16mΩ @ VGS = 10V
- **ID (continuous leakage current):** -9A
- **Technology:** Trench technology, providing low power consumption and efficient switching performance.
Domain and module applications：
Application Examples
1. **Negative Voltage Power Management:**
The negative drain-source voltage (-30V) of IRF7707TRPBF-VB makes it very suitable for switch applications in negative voltage power management systems. It can work stably in a negative voltage environment and provide reliable power switch control.
2. **Battery Protection and Management:**
In battery protection and management systems, the low RDS(ON) and high current carrying capacity of this MOSFET help optimize the battery charging and discharging process. It can effectively control the current flow of the battery and improve the efficiency and safety of the system.
3. **DC-DC Converter:**
The low on-resistance and good current handling capability of IRF7707TRPBF-VB make it very suitable for use in DC-DC converters. It can improve voltage conversion efficiency, reduce power loss, and is widely used in various power conversion modules.
4. **Load switch control: **
Due to its efficient switching performance and low power consumption, the IRF7707TRPBF-VB is also very suitable for load switch control applications. For example, it can be used in industrial equipment and consumer electronics to control the on/off state of the load, providing stable and reliable control.
These features make the IRF7707TRPBF-VB an ideal choice for negative voltage power supply systems and efficient switch control applications, especially where high current handling and low power consumption are required.
1. **Negative Voltage Power Management:**
The negative drain-source voltage (-30V) of IRF7707TRPBF-VB makes it very suitable for switch applications in negative voltage power management systems. It can work stably in a negative voltage environment and provide reliable power switch control.
2. **Battery Protection and Management:**
In battery protection and management systems, the low RDS(ON) and high current carrying capacity of this MOSFET help optimize the battery charging and discharging process. It can effectively control the current flow of the battery and improve the efficiency and safety of the system.
3. **DC-DC Converter:**
The low on-resistance and good current handling capability of IRF7707TRPBF-VB make it very suitable for use in DC-DC converters. It can improve voltage conversion efficiency, reduce power loss, and is widely used in various power conversion modules.
4. **Load switch control: **
Due to its efficient switching performance and low power consumption, the IRF7707TRPBF-VB is also very suitable for load switch control applications. For example, it can be used in industrial equipment and consumer electronics to control the on/off state of the load, providing stable and reliable control.
These features make the IRF7707TRPBF-VB an ideal choice for negative voltage power supply systems and efficient switch control applications, especially where high current handling and low power consumption are required.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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