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IRF7707GTRPBF-VB Product details
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IRF7707GTRPBF-VB MOSFET Product Introduction:
**IRF7707GTRPBF-VB** is a high-performance **single-stage P-channel MOSFET**, designed in **TSSOP8** package, designed for compact and high-performance circuit applications. This MOSFET supports **-30V** drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**, suitable for low-voltage and high-performance application scenarios. Its **threshold voltage (Vth)** is **-1.7V**, and it can be reliably turned on at a lower gate voltage. The **RDS(ON)** of the MOSFET at **4.5V gate-source voltage** is **20mΩ**, and at **10V gate-source voltage** is **16mΩ**, showing a lower on-resistance, which can effectively reduce conduction losses. With a leakage current (ID) rating of -9A and Trench technology, it optimizes switching performance and thermal management for a variety of power management applications requiring high performance and miniaturization.
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**IRF7707GTRPBF-VB** is a high-performance **single-stage P-channel MOSFET**, designed in **TSSOP8** package, designed for compact and high-performance circuit applications. This MOSFET supports **-30V** drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**, suitable for low-voltage and high-performance application scenarios. Its **threshold voltage (Vth)** is **-1.7V**, and it can be reliably turned on at a lower gate voltage. The **RDS(ON)** of the MOSFET at **4.5V gate-source voltage** is **20mΩ**, and at **10V gate-source voltage** is **16mΩ**, showing a lower on-resistance, which can effectively reduce conduction losses. With a leakage current (ID) rating of -9A and Trench technology, it optimizes switching performance and thermal management for a variety of power management applications requiring high performance and miniaturization.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description:
- **Package: ** TSSOP8
- **Configuration: ** Single-stage P-channel MOSFET
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.7V
- **RDS(ON): ** 20mΩ @ VGS = 4.5V
16mΩ @ VGS = 10V
- **Drain current (ID): ** -9A
- **Technology: ** Trench
- **Switching speed: ** High, suitable for fast switching applications
- **Power consumption: ** Low, optimize energy efficiency and thermal management
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- **Package: ** TSSOP8
- **Configuration: ** Single-stage P-channel MOSFET
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.7V
- **RDS(ON): ** 20mΩ @ VGS = 4.5V
16mΩ @ VGS = 10V
- **Drain current (ID): ** -9A
- **Technology: ** Trench
- **Switching speed: ** High, suitable for fast switching applications
- **Power consumption: ** Low, optimize energy efficiency and thermal management
---
Domain and module applications：
Application Examples:
1. **Power Management System:**
**IRF7707GTRPBF-VB** is very suitable for **low voltage DC-DC converter** and **power management module**. Its high efficiency and low RDS(ON) can effectively improve the power conversion efficiency and is suitable for power management applications that require high efficiency and low power consumption.
2. **Load Switch:**
In **load switch** applications, IRF7707GTRPBF-VB can be used as a load switch, especially in situations that require high current and high efficiency, such as **power window** and **power seat** control. Its low on-resistance and excellent switching performance can improve the overall system efficiency.
3. **Battery Protection Circuit:**
This MOSFET is also suitable for **battery protection circuit**, especially in high current and low power consumption battery management systems. Its high withstand voltage and low on-resistance can effectively prevent overcurrent and overvoltage, protecting the safety and reliability of the battery system.
4. **Miniaturized Electronic Devices:**
**The **TSSOP8** package of **IRF7707GTRPBF-VB** is very suitable for **miniaturized electronic devices**, such as **portable devices** and **mobile electronic products**. Its compact package and efficient performance make it very suitable in space-constrained designs.
These application examples highlight the wide applicability of IRF7707GTRPBF-VB in low-voltage, high-efficiency and miniaturized power management systems, especially in electronic systems that require high switching speeds and low power consumption.
1. **Power Management System:**
**IRF7707GTRPBF-VB** is very suitable for **low voltage DC-DC converter** and **power management module**. Its high efficiency and low RDS(ON) can effectively improve the power conversion efficiency and is suitable for power management applications that require high efficiency and low power consumption.
2. **Load Switch:**
In **load switch** applications, IRF7707GTRPBF-VB can be used as a load switch, especially in situations that require high current and high efficiency, such as **power window** and **power seat** control. Its low on-resistance and excellent switching performance can improve the overall system efficiency.
3. **Battery Protection Circuit:**
This MOSFET is also suitable for **battery protection circuit**, especially in high current and low power consumption battery management systems. Its high withstand voltage and low on-resistance can effectively prevent overcurrent and overvoltage, protecting the safety and reliability of the battery system.
4. **Miniaturized Electronic Devices:**
**The **TSSOP8** package of **IRF7707GTRPBF-VB** is very suitable for **miniaturized electronic devices**, such as **portable devices** and **mobile electronic products**. Its compact package and efficient performance make it very suitable in space-constrained designs.
These application examples highlight the wide applicability of IRF7707GTRPBF-VB in low-voltage, high-efficiency and miniaturized power management systems, especially in electronic systems that require high switching speeds and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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