Featured Model

IRF7706TRPBF-VB Product details

Product introduction:

Product Introduction

IRF7706TRPBF-VB is a high-efficiency single P-channel power MOSFET packaged as TSSOP8. The drain-source voltage (VDS) of this MOSFET is -30V, and the gate-source voltage (VGS) is ±20V, which can adapt to higher voltage changes. Its threshold voltage (Vth) is -1.7V, which allows it to be turned on at a lower gate voltage. The on-resistance (RDS(ON)) of IRF7706TRPBF-VB is 20mΩ@VGS=4.5V and 16mΩ@VGS=10V, respectively, and the maximum drain current (ID) is -9A. This MOSFET adopts Trench technology, has excellent switching performance and low power consumption characteristics, and is suitable for application scenarios with high efficiency and compact design requirements.

File download

Download PDF document
Download now

Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Single-P -30V -1.7V -9A 16mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Single-P -30V -1.7V -9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Single-P -30V -1.7V -9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Single-P
Detailed parameter description

| Parameter| Value|
|---------------------|-----------------------|
| Device model| IRF7706TRPBF-VB |
| Package| TSSOP8 |
| Polarity| Single P-channel|
| Drain-source voltage (VDS) | -30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 20mΩ @ VGS=4.5V |
| | 16mΩ @ VGS=10V |
| Drain current (ID) | -9A |
| Technology| Trench |

Domain and module applications:

Applications and Modules

1. **Load Switch**
- The IRF7706TRPBF-VB is suitable for load switch applications, where its low on-resistance and high drain current capability enable it to efficiently control the load. Especially in load switches that require high efficiency and low power consumption, this MOSFET can ensure stable switching performance and reduce power loss.

2. **DC-DC Converter**
- In DC-DC converters, the low RDS(ON) value of the IRF7706TRPBF-VB enables it to reduce power loss and improve the overall efficiency of the converter. This makes the MOSFET very suitable for medium voltage conversion applications, which can effectively improve the energy conversion efficiency of the system.

3. **Power Management**
- The IRF7706TRPBF-VB is also widely used in power management modules, including battery management and power switch systems. Its low on-resistance and high current handling capability can provide stable current control, improving the efficiency and reliability of power management systems.

4. **Industrial and Automotive Electronics**
- This MOSFET is also suitable for industrial control and automotive electronics. Due to its compact TSSOP8 package and high performance, the IRF7706TRPBF-VB is suitable for providing stable performance in space-constrained applications such as automation systems, sensor interfaces, and automotive power management modules. These features ensure reliable operation in harsh environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

Sample Req

QQ

Telephone

400-655-8788

WeChat

WeChat

Topping

Sample Req
Online
Telephone
WeChat