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IRF7706GTRPBF-VB Product details
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Product Introduction - IRF7706GTRPBF-VB
IRF7706GTRPBF-VB is a single P-channel MOSFET in TSSOP8 package, designed for negative voltage applications. Its rated drain-source voltage is -30V, gate-source voltage is ±20V, and maximum drain current is -9A. Based on advanced trench technology, the device has low on-resistance and excellent switching performance, making it very suitable for switch control and load management in negative voltage environments. The low gate threshold voltage and low RDS(ON) characteristics of the IRF7706GTRPBF-VB enable it to excel in high-efficiency and reliable load switch applications.
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IRF7706GTRPBF-VB is a single P-channel MOSFET in TSSOP8 package, designed for negative voltage applications. Its rated drain-source voltage is -30V, gate-source voltage is ±20V, and maximum drain current is -9A. Based on advanced trench technology, the device has low on-resistance and excellent switching performance, making it very suitable for switch control and load management in negative voltage environments. The low gate threshold voltage and low RDS(ON) characteristics of the IRF7706GTRPBF-VB enable it to excel in high-efficiency and reliable load switch applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
- **Package type**: TSSOP8
- **Polarity configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 16mΩ @ VGS=10V
- 20mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench
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- **Package type**: TSSOP8
- **Polarity configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 16mΩ @ VGS=10V
- 20mΩ @ VGS=4.5V
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench
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Domain and module applications：
Applications and module examples
1. **Negative voltage switch control**: The IRF7706GTRPBF-VB is suitable for negative voltage switch control applications, such as switching elements in negative voltage power supplies. Its low RDS(ON) and high-efficiency switching performance ensure stable and reliable switch control in negative voltage environments, meeting high-efficiency requirements.
2. **Load switch management**: In load switch management that requires negative voltage, this MOSFET can efficiently control load switches, such as in consumer electronics, power adapters, or battery management systems. Its low on-resistance characteristics help reduce power consumption and heat, and improve system efficiency.
3. **Negative voltage DC-DC converter**: Used in negative voltage DC-DC converters, the IRF7706GTRPBF-VB can provide efficient power conversion. Its excellent switching performance and low on-resistance help improve conversion efficiency and reduce system energy loss.
4. **Motor drive applications**: In negative voltage motor drive modules, this MOSFET can handle switching operations under negative voltage conditions, such as power tools and electric toys. Its stable switching performance and low RDS(ON) characteristics can effectively improve the efficiency and reliability of the motor drive system.
1. **Negative voltage switch control**: The IRF7706GTRPBF-VB is suitable for negative voltage switch control applications, such as switching elements in negative voltage power supplies. Its low RDS(ON) and high-efficiency switching performance ensure stable and reliable switch control in negative voltage environments, meeting high-efficiency requirements.
2. **Load switch management**: In load switch management that requires negative voltage, this MOSFET can efficiently control load switches, such as in consumer electronics, power adapters, or battery management systems. Its low on-resistance characteristics help reduce power consumption and heat, and improve system efficiency.
3. **Negative voltage DC-DC converter**: Used in negative voltage DC-DC converters, the IRF7706GTRPBF-VB can provide efficient power conversion. Its excellent switching performance and low on-resistance help improve conversion efficiency and reduce system energy loss.
4. **Motor drive applications**: In negative voltage motor drive modules, this MOSFET can handle switching operations under negative voltage conditions, such as power tools and electric toys. Its stable switching performance and low RDS(ON) characteristics can effectively improve the efficiency and reliability of the motor drive system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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