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IRF7704TRPBF-VB Product details
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IRF7704TRPBF-VB MOSFET Product Introduction
**IRF7704TRPBF-VB** is a high-performance P-channel power MOSFET in **TSSOP8** package, designed for low voltage and high efficiency switching applications. This MOSFET has a drain-source voltage (VDS) of -30V, suitable for negative voltage applications. Its threshold voltage (Vth) is -1.7V, ensuring efficient startup at a lower gate voltage. IRF7704TRPBF-VB uses trench technology (Trench), which improves the switching performance and conduction efficiency of the MOSFET, and is suitable for circuits requiring low on-resistance and high efficiency.
**IRF7704TRPBF-VB** is a high-performance P-channel power MOSFET in **TSSOP8** package, designed for low voltage and high efficiency switching applications. This MOSFET has a drain-source voltage (VDS) of -30V, suitable for negative voltage applications. Its threshold voltage (Vth) is -1.7V, ensuring efficient startup at a lower gate voltage. IRF7704TRPBF-VB uses trench technology (Trench), which improves the switching performance and conduction efficiency of the MOSFET, and is suitable for circuits requiring low on-resistance and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
IRF7704TRPBF-VB Detailed parameters
- **Package**: TSSOP8
- **Configuration**: Single P-channel MOSFET
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V (typical)
- **RDS(ON) (on-resistance)**:
- 20mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **ID (continuous leakage current)**: -9A
- **Technology**: Trench technology
- **Package**: TSSOP8
- **Configuration**: Single P-channel MOSFET
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V (typical)
- **RDS(ON) (on-resistance)**:
- 20mΩ @ VGS = 4.5V
- 16mΩ @ VGS = 10V
- **ID (continuous leakage current)**: -9A
- **Technology**: Trench technology
Domain and module applications：
Applications and Modules
1. **Load Switch**: The low on-resistance and high efficiency of the IRF7704TRPBF-VB make it ideal for load switch applications. It can provide reliable switching performance in a variety of devices that need to control loads, such as home appliances, battery management systems, and small power modules.
2. **DC-DC Converter**: Due to its excellent switching characteristics, this MOSFET is suitable for use in DC-DC converters, especially in low-voltage applications. Its ability to handle current efficiently is suitable for power conversion in a variety of small electronic devices, such as mobile devices, tablets, and digital cameras.
3. **Battery Protection Circuit**: In the battery protection circuit, the IRF7704TRPBF-VB can be used to protect the battery from overcurrent and overvoltage. It is suitable for battery management systems in various portable devices, such as smartphones, laptops, and other charging devices.
4. **Power Management**: This MOSFET is also ideal for power management applications, such as power management ICs and power regulation modules. It can efficiently switch and handle load current, and is widely used in power adapters, switching power supplies and other power management systems that require high efficiency.
IRF7704TRPBF-VB is suitable for a variety of switching applications that require high efficiency and reliability with its low on-resistance and high switching efficiency. It provides stable performance in areas such as load control, battery protection and power management.
1. **Load Switch**: The low on-resistance and high efficiency of the IRF7704TRPBF-VB make it ideal for load switch applications. It can provide reliable switching performance in a variety of devices that need to control loads, such as home appliances, battery management systems, and small power modules.
2. **DC-DC Converter**: Due to its excellent switching characteristics, this MOSFET is suitable for use in DC-DC converters, especially in low-voltage applications. Its ability to handle current efficiently is suitable for power conversion in a variety of small electronic devices, such as mobile devices, tablets, and digital cameras.
3. **Battery Protection Circuit**: In the battery protection circuit, the IRF7704TRPBF-VB can be used to protect the battery from overcurrent and overvoltage. It is suitable for battery management systems in various portable devices, such as smartphones, laptops, and other charging devices.
4. **Power Management**: This MOSFET is also ideal for power management applications, such as power management ICs and power regulation modules. It can efficiently switch and handle load current, and is widely used in power adapters, switching power supplies and other power management systems that require high efficiency.
IRF7704TRPBF-VB is suitable for a variety of switching applications that require high efficiency and reliability with its low on-resistance and high switching efficiency. It provides stable performance in areas such as load control, battery protection and power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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