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IRF7704GTRPBF-VB Product details
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1. IRF7704GTRPBF-VB Product Introduction
IRF7704GTRPBF-VB is a high-performance P-channel MOSFET in TSSOP8 package, designed for low-voltage and high-efficiency switching applications. Its maximum drain-source voltage (VDS) is -30V, suitable for use in negative voltage environments. The threshold voltage (Vth) of this MOSFET is -1.7V, which enables it to turn on at a lower gate voltage, suitable for low-voltage control circuits. The on-resistance (RDS(ON)) of IRF7704GTRPBF-VB is very low, 20mΩ@VGS=4.5V and 16mΩ@VGS=10V, respectively, which effectively reduces switching losses and power consumption. Using Trench technology, this MOSFET provides excellent switching performance and thermal management capabilities, suitable for a variety of high-efficiency applications.
IRF7704GTRPBF-VB is a high-performance P-channel MOSFET in TSSOP8 package, designed for low-voltage and high-efficiency switching applications. Its maximum drain-source voltage (VDS) is -30V, suitable for use in negative voltage environments. The threshold voltage (Vth) of this MOSFET is -1.7V, which enables it to turn on at a lower gate voltage, suitable for low-voltage control circuits. The on-resistance (RDS(ON)) of IRF7704GTRPBF-VB is very low, 20mΩ@VGS=4.5V and 16mΩ@VGS=10V, respectively, which effectively reduces switching losses and power consumption. Using Trench technology, this MOSFET provides excellent switching performance and thermal management capabilities, suitable for a variety of high-efficiency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
2. IRF7704GTRPBF-VB Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- **Drain current (ID)**: -9A
- **Technology**: Trench process
- **Switching characteristics**: Suitable for low voltage, high-efficiency switching applications
- **Power loss**: Low on-resistance helps reduce switching losses and improve system efficiency
- **Package type**: TSSOP8
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- **Drain current (ID)**: -9A
- **Technology**: Trench process
- **Switching characteristics**: Suitable for low voltage, high-efficiency switching applications
- **Power loss**: Low on-resistance helps reduce switching losses and improve system efficiency
Domain and module applications：
III. Application fields and module examples
1. **Power management system**:
The IRF7704GTRPBF-VB is suitable for switching applications in power management systems, such as in DC-DC converters and power regulators. Its low on-resistance and high current capability enable it to switch efficiently in negative voltage environments, providing stable power output.
2. **Load switch**:
Due to its low on-resistance, this MOSFET is suitable for load switching circuits. As a power switch in portable devices or battery-powered devices, it can effectively reduce power consumption and improve battery life while maintaining efficient switching performance.
3. **Motor control**:
In motor drive applications, the IRF7704GTRPBF-VB can be used as a switch control for the motor. Its high current handling capability and low power consumption make it suitable for controlling the start and operation of the motor, ensuring the high efficiency and stability of the motor.
4. **Consumer Electronics**:
In various consumer electronics products, such as smartphones, tablets, etc., the IRF7704GTRPBF-VB can be used as a power switch or protection circuit. Its compact TSSOP8 package is suitable for space-constrained designs, while its low on-resistance and high efficiency help improve the overall performance and battery life of the device.
1. **Power management system**:
The IRF7704GTRPBF-VB is suitable for switching applications in power management systems, such as in DC-DC converters and power regulators. Its low on-resistance and high current capability enable it to switch efficiently in negative voltage environments, providing stable power output.
2. **Load switch**:
Due to its low on-resistance, this MOSFET is suitable for load switching circuits. As a power switch in portable devices or battery-powered devices, it can effectively reduce power consumption and improve battery life while maintaining efficient switching performance.
3. **Motor control**:
In motor drive applications, the IRF7704GTRPBF-VB can be used as a switch control for the motor. Its high current handling capability and low power consumption make it suitable for controlling the start and operation of the motor, ensuring the high efficiency and stability of the motor.
4. **Consumer Electronics**:
In various consumer electronics products, such as smartphones, tablets, etc., the IRF7704GTRPBF-VB can be used as a power switch or protection circuit. Its compact TSSOP8 package is suitable for space-constrained designs, while its low on-resistance and high efficiency help improve the overall performance and battery life of the device.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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