IRF7703TRPBF-VB Product details
Product introduction:
IRF7703TRPBF-VB is a single P-channel MOSFET in TSSOP8 package, designed for low voltage, high-efficiency switching applications. Its maximum drain-source voltage (VDS) is -30V, suitable for use in negative voltage environments. The threshold voltage (Vth) of this MOSFET is -1.7V, and it can effectively conduct at a lower gate-source voltage. The on-resistance (RDS(ON)) of IRF7703TRPBF-VB is 20mΩ at VGS=4.5V, which is further reduced to 16mΩ at VGS=10V, and the maximum drain current (ID) is -9A. Using trench technology, it has excellent switching performance and low conduction loss, and is very suitable for applications such as load switching and power management.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
- **Package type**: TSSOP8
- **MOSFET type**: Single P-channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ @ VGS=4.5V
- 16mΩ @ VGS=10V
- **Maximum drain current (ID)**: -9A
- **Technology type**: Trench technology
- **Power dissipation**: Depends on the actual heat dissipation design
- **Switching speed**: Depends on the circuit layout and driving conditions
- **Input capacitance (Ciss)**: For related parameters, please refer to the detailed data sheet
Domain and module applications:
The low on-resistance and high current capability of IRF7703TRPBF-VB make it suitable for a variety of load switching and high-efficiency power management applications. Here are some specific application scenarios:
1. **Load switch**: In applications that require precise load control, such as home appliances, consumer electronics, and industrial control systems, IRF7703TRPBF-VB can provide stable switching performance, achieve efficient load control, reduce power loss, and improve system reliability.
2. **Power management**: In power management modules, especially in situations where high efficiency is required and negative voltages need to be processed, such as power regulators and DC-DC converters, IRF7703TRPBF-VB can optimize switching performance, reduce power consumption, and improve power efficiency.
3. **Battery switch**: In battery management systems, this MOSFET is suitable for battery switches and protection circuits, which can reliably control the battery charging and discharging process and improve the battery life and safety.
4. **Negative voltage applications**: In negative voltage applications, such as power management of negative voltage rails and negative voltage drive circuits, the IRF7703TRPBF-VB can handle negative voltages, ensure stable circuit operation and optimize system performance.
In short, the IRF7703TRPBF-VB is suitable for load switching, power management, battery switching and negative voltage applications with its low on-resistance, moderate current capability and negative voltage handling capability. It is an efficient and reliable solution.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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