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IRF7703GTRPBF-VB Product details
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IRF7703GTRPBF-VB MOSFET Product Introduction
**IRF7703GTRPBF-VB** is a single P-channel MOSFET packaged in **TSSOP8** and uses **Trench** technology. This MOSFET has a **-30V** drain-source voltage (VDS)**, suitable for low-voltage load switching applications. Its **gate-source voltage (VGS)** range is ±20V, providing a wide range of operating flexibility. The **threshold voltage (Vth)** of the MOSFET is **-1.7V**, and it has a low **on-resistance (RDS(ON)** at different gate drive voltages: **20mΩ** at **VGS=4.5V** and **16mΩ** at **VGS=10V**. Its **drain current (ID)** is **-9A**, making it suitable for applications handling medium power.
**IRF7703GTRPBF-VB** is a single P-channel MOSFET packaged in **TSSOP8** and uses **Trench** technology. This MOSFET has a **-30V** drain-source voltage (VDS)**, suitable for low-voltage load switching applications. Its **gate-source voltage (VGS)** range is ±20V, providing a wide range of operating flexibility. The **threshold voltage (Vth)** of the MOSFET is **-1.7V**, and it has a low **on-resistance (RDS(ON)** at different gate drive voltages: **20mΩ** at **VGS=4.5V** and **16mΩ** at **VGS=10V**. Its **drain current (ID)** is **-9A**, making it suitable for applications handling medium power.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
IRF7703GTRPBF-VB Detailed parameters
- **Package:** TSSOP8
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **Drain current (ID):** -9A
- **RDS(ON):** 20mΩ @ VGS = 4.5V
- **RDS(ON):** 16mΩ @ VGS = 10V
- **Technology:** Trench
- **Package:** TSSOP8
- **Configuration:** Single P-channel
- **Drain-source voltage (VDS):** -30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **Drain current (ID):** -9A
- **RDS(ON):** 20mΩ @ VGS = 4.5V
- **RDS(ON):** 16mΩ @ VGS = 10V
- **Technology:** Trench
Domain and module applications：
Application Examples
**IRF7703GTRPBF-VB** MOSFET excels in the following fields and modules:
1. **Load Switch:** Due to its low RDS(ON) value and moderate current capability, the IRF7703GTRPBF-VB is suitable for various load switch applications, especially where low on-resistance is required, such as load switch control in electronic equipment, which can effectively reduce power loss.
2. **Power Management:** This MOSFET is suitable for power management circuits, especially in low-voltage power systems that require efficient switching control. Its low on-resistance helps improve power conversion efficiency and reduce heat generation.
3. **Battery Protection Circuit:** In battery management and protection circuits, the IRF7703GTRPBF-VB can be used as a protection switch to prevent overcharging and over-discharging. The efficient switching capability and moderate current handling capability of this MOSFET make it excel in battery protection applications.
4. **DC-DC Converter:** This MOSFET can be used as a low-side switch in a DC-DC converter, especially when medium current and voltage need to be handled. Its low RDS(ON) value can improve conversion efficiency and reduce losses.
5. **Switching Power Supply:** In a switching power supply module, the IRF7703GTRPBF-VB acts as a P-channel MOSFET, which can effectively control the current flow and improve the overall performance and stability of the system.
Due to its high efficiency and low on-resistance, this MOSFET is suitable for many applications such as low-voltage load switching, power management, battery protection and DC-DC conversion.
**IRF7703GTRPBF-VB** MOSFET excels in the following fields and modules:
1. **Load Switch:** Due to its low RDS(ON) value and moderate current capability, the IRF7703GTRPBF-VB is suitable for various load switch applications, especially where low on-resistance is required, such as load switch control in electronic equipment, which can effectively reduce power loss.
2. **Power Management:** This MOSFET is suitable for power management circuits, especially in low-voltage power systems that require efficient switching control. Its low on-resistance helps improve power conversion efficiency and reduce heat generation.
3. **Battery Protection Circuit:** In battery management and protection circuits, the IRF7703GTRPBF-VB can be used as a protection switch to prevent overcharging and over-discharging. The efficient switching capability and moderate current handling capability of this MOSFET make it excel in battery protection applications.
4. **DC-DC Converter:** This MOSFET can be used as a low-side switch in a DC-DC converter, especially when medium current and voltage need to be handled. Its low RDS(ON) value can improve conversion efficiency and reduce losses.
5. **Switching Power Supply:** In a switching power supply module, the IRF7703GTRPBF-VB acts as a P-channel MOSFET, which can effectively control the current flow and improve the overall performance and stability of the system.
Due to its high efficiency and low on-resistance, this MOSFET is suitable for many applications such as low-voltage load switching, power management, battery protection and DC-DC conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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