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IRF7702TRPBF-VB Product details
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IRF7702TRPBF-VB MOSFET Product Introduction
The IRF7702TRPBF-VB is a high-performance single P-channel MOSFET in a TSSOP8 package. This MOSFET is designed for low-voltage applications and has excellent switching performance and low power consumption. Its drain-source voltage (VDS) is -30V, which is suitable for negative voltage power supply systems. The gate-source voltage (VGS) range is ±20V, making it stable in various drive circuits. Its threshold voltage (Vth) is -1.7V, ensuring lower gate drive voltage requirements. The IRF7702TRPBF-VB has an RDS(ON) of 20mΩ at VGS of 4.5V, which is further reduced to 16mΩ at VGS of 10V, providing low on-resistance and efficient current transfer. Its maximum continuous drain current (ID) is -9A, which is suitable for high-efficiency switching and power control applications.
The IRF7702TRPBF-VB is a high-performance single P-channel MOSFET in a TSSOP8 package. This MOSFET is designed for low-voltage applications and has excellent switching performance and low power consumption. Its drain-source voltage (VDS) is -30V, which is suitable for negative voltage power supply systems. The gate-source voltage (VGS) range is ±20V, making it stable in various drive circuits. Its threshold voltage (Vth) is -1.7V, ensuring lower gate drive voltage requirements. The IRF7702TRPBF-VB has an RDS(ON) of 20mΩ at VGS of 4.5V, which is further reduced to 16mΩ at VGS of 10V, providing low on-resistance and efficient current transfer. Its maximum continuous drain current (ID) is -9A, which is suitable for high-efficiency switching and power control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
- **Package:** TSSOP8
- **Configuration:** Single P-channel MOSFET
- **VDS (drain-source voltage):** -30V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** -1.7V
- **RDS(ON):** 20mΩ @ VGS = 4.5V
- **RDS(ON):** 16mΩ @ VGS = 10V
- **ID (continuous leakage current):** -9A
- **Technology:** Trench technology, providing low power consumption and efficient switching performance.
- **Package:** TSSOP8
- **Configuration:** Single P-channel MOSFET
- **VDS (drain-source voltage):** -30V
- **VGS (gate-source voltage):** ±20V
- **Vth (gate threshold voltage):** -1.7V
- **RDS(ON):** 20mΩ @ VGS = 4.5V
- **RDS(ON):** 16mΩ @ VGS = 10V
- **ID (continuous leakage current):** -9A
- **Technology:** Trench technology, providing low power consumption and efficient switching performance.
Domain and module applications：
Application Examples
1. **Negative Voltage Power Switch:**
The negative drain-source voltage (-30V) of the IRF7702TRPBF-VB makes it ideal for switching applications in negative voltage power systems. It is able to operate stably in a negative voltage environment and provide efficient switching control.
2. **Battery Management System:**
Due to its low RDS(ON) and high current carrying capability, this MOSFET is suitable for switching and protection functions in battery management systems. In these systems, it can efficiently control battery charging and discharging, optimizing battery usage efficiency.
3. **DC-DC Converter:**
In DC-DC converter applications, the low on-resistance and high current handling capability of the IRF7702TRPBF-VB help improve conversion efficiency. It is able to provide stable current conversion, reduce power loss, and is suitable for various voltage conversion modules.
4. **Load Switch: **
This MOSFET can be used in load switch applications, such as providing efficient switching operation in load control circuits. Its high current capability and low conduction loss make it suitable for load switches in industrial equipment and consumer electronics.
These features make the IRF7702TRPBF-VB an ideal choice for negative voltage applications and efficient switch control, especially in power management and load control systems that require high current handling and low power consumption.
1. **Negative Voltage Power Switch:**
The negative drain-source voltage (-30V) of the IRF7702TRPBF-VB makes it ideal for switching applications in negative voltage power systems. It is able to operate stably in a negative voltage environment and provide efficient switching control.
2. **Battery Management System:**
Due to its low RDS(ON) and high current carrying capability, this MOSFET is suitable for switching and protection functions in battery management systems. In these systems, it can efficiently control battery charging and discharging, optimizing battery usage efficiency.
3. **DC-DC Converter:**
In DC-DC converter applications, the low on-resistance and high current handling capability of the IRF7702TRPBF-VB help improve conversion efficiency. It is able to provide stable current conversion, reduce power loss, and is suitable for various voltage conversion modules.
4. **Load Switch: **
This MOSFET can be used in load switch applications, such as providing efficient switching operation in load control circuits. Its high current capability and low conduction loss make it suitable for load switches in industrial equipment and consumer electronics.
These features make the IRF7702TRPBF-VB an ideal choice for negative voltage applications and efficient switch control, especially in power management and load control systems that require high current handling and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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