中文
English
IRF7702GTRPBF-VB Product details
Back to previous pageProduct introduction：
IRF7702GTRPBF-VB MOSFET Product Introduction:
**IRF7702GTRPBF-VB** is a high-performance **single-stage P-channel MOSFET**, which adopts **TSSOP8** package and is designed for circuit designs that require high performance and miniaturization. This MOSFET supports **-30V** drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**, which is suitable for low-voltage high-performance applications. Its **threshold voltage (Vth)** is **-1.7V**, ensuring reliable turn-on at a lower gate drive voltage. The **RDS(ON)** of the MOSFET at **4.5V gate-source voltage** is **20mΩ**, and at **10V gate-source voltage** is **16mΩ**, showing a low on-resistance, which can effectively reduce conduction losses. With a leakage current (ID) rating of -9A and Trench technology, it optimizes switching performance and thermal management for a variety of power management applications requiring high performance and miniaturization.
---
**IRF7702GTRPBF-VB** is a high-performance **single-stage P-channel MOSFET**, which adopts **TSSOP8** package and is designed for circuit designs that require high performance and miniaturization. This MOSFET supports **-30V** drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**, which is suitable for low-voltage high-performance applications. Its **threshold voltage (Vth)** is **-1.7V**, ensuring reliable turn-on at a lower gate drive voltage. The **RDS(ON)** of the MOSFET at **4.5V gate-source voltage** is **20mΩ**, and at **10V gate-source voltage** is **16mΩ**, showing a low on-resistance, which can effectively reduce conduction losses. With a leakage current (ID) rating of -9A and Trench technology, it optimizes switching performance and thermal management for a variety of power management applications requiring high performance and miniaturization.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description:
- **Package: ** TSSOP8
- **Configuration: ** Single-stage P-channel MOSFET
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.7V
- **RDS(ON): ** 20mΩ @ VGS = 4.5V
16mΩ @ VGS = 10V
- **Drain current (ID): ** -9A
- **Technology: ** Trench
- **Switching speed: ** High, suitable for fast switching applications
- **Power consumption: ** Low, optimize energy efficiency and thermal management
---
- **Package: ** TSSOP8
- **Configuration: ** Single-stage P-channel MOSFET
- **Drain-source voltage (VDS): ** -30V
- **Gate-source voltage (VGS): ** ±20V
- **Threshold voltage (Vth): ** -1.7V
- **RDS(ON): ** 20mΩ @ VGS = 4.5V
16mΩ @ VGS = 10V
- **Drain current (ID): ** -9A
- **Technology: ** Trench
- **Switching speed: ** High, suitable for fast switching applications
- **Power consumption: ** Low, optimize energy efficiency and thermal management
---
Domain and module applications：
Application Examples:
1. **Low Voltage Power Management:**
**IRF7702GTRPBF-VB** is ideal for **low voltage DC-DC converters** and **power management modules**. Its low RDS(ON) and high current handling capability ensure high efficiency power conversion, suitable for power systems that require low power consumption and high efficiency.
2. **Load Switch:**
In **load switch** applications, IRF7702GTRPBF-VB can be used as a load switch, especially in applications that require high efficiency and low power consumption, such as **power windows**, **power seats** and other automotive applications. Its low on-resistance and high switching speed can improve the overall efficiency of the system.
3. **Battery Protection:**
This MOSFET performs well in **battery protection circuits** and is suitable for battery management systems that require high current handling and low power consumption. It can effectively prevent over-current and over-voltage conditions, protect the battery from damage, and ensure the long life and safety of the battery.
4. **Miniaturized Electronic Devices:**
The **TSSOP8** package of the IRF7702GTRPBF-VB is suitable for **miniaturized electronic devices**, such as **portable devices** and **mobile electronics**. Its small package and high performance characteristics make it an ideal choice in designs with limited space.
These application examples highlight the wide applicability of the IRF7702GTRPBF-VB in low-voltage, high-performance and miniaturized power management systems, especially in electronic systems that require high switching speeds and low power consumption.
1. **Low Voltage Power Management:**
**IRF7702GTRPBF-VB** is ideal for **low voltage DC-DC converters** and **power management modules**. Its low RDS(ON) and high current handling capability ensure high efficiency power conversion, suitable for power systems that require low power consumption and high efficiency.
2. **Load Switch:**
In **load switch** applications, IRF7702GTRPBF-VB can be used as a load switch, especially in applications that require high efficiency and low power consumption, such as **power windows**, **power seats** and other automotive applications. Its low on-resistance and high switching speed can improve the overall efficiency of the system.
3. **Battery Protection:**
This MOSFET performs well in **battery protection circuits** and is suitable for battery management systems that require high current handling and low power consumption. It can effectively prevent over-current and over-voltage conditions, protect the battery from damage, and ensure the long life and safety of the battery.
4. **Miniaturized Electronic Devices:**
The **TSSOP8** package of the IRF7702GTRPBF-VB is suitable for **miniaturized electronic devices**, such as **portable devices** and **mobile electronics**. Its small package and high performance characteristics make it an ideal choice in designs with limited space.
These application examples highlight the wide applicability of the IRF7702GTRPBF-VB in low-voltage, high-performance and miniaturized power management systems, especially in electronic systems that require high switching speeds and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
