中文
English
IRF7701GTRPBF-VB Product details
Back to previous pageProduct introduction：
Product Introduction
IRF7701GTRPBF-VB is a high-efficiency single P-channel power MOSFET packaged as TSSOP8. The drain-source voltage (VDS) of this MOSFET is -30V and the gate-source voltage (VGS) is ±20V, which is suitable for negative voltage applications. Its threshold voltage (Vth) is -1.7V, ensuring that it can be started at a lower gate voltage. The on-resistance (RDS(ON)) is 20mΩ@VGS=4.5V and 16mΩ@VGS=10V at different gate-source voltages, providing low-loss current conduction. The maximum drain current (ID) of IRF7701GTRPBF-VB is -9A, and it uses Trench technology, which makes it excel in low-power and high-efficiency switching applications, and is very suitable for power management and switching circuits that require high efficiency and high reliability.
IRF7701GTRPBF-VB is a high-efficiency single P-channel power MOSFET packaged as TSSOP8. The drain-source voltage (VDS) of this MOSFET is -30V and the gate-source voltage (VGS) is ±20V, which is suitable for negative voltage applications. Its threshold voltage (Vth) is -1.7V, ensuring that it can be started at a lower gate voltage. The on-resistance (RDS(ON)) is 20mΩ@VGS=4.5V and 16mΩ@VGS=10V at different gate-source voltages, providing low-loss current conduction. The maximum drain current (ID) of IRF7701GTRPBF-VB is -9A, and it uses Trench technology, which makes it excel in low-power and high-efficiency switching applications, and is very suitable for power management and switching circuits that require high efficiency and high reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
| Parameter| Value|
|---------------------|-----------------------|
| Device model| IRF7701GTRPBF-VB |
| Package| TSSOP8 |
| Polarity| Single P-channel|
| Drain-source voltage (VDS) | -30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 20mΩ @ VGS=4.5V |
| | 16mΩ @ VGS=10V |
| Drain current (ID) | -9A |
| Technology| Trench |
| Parameter| Value|
|---------------------|-----------------------|
| Device model| IRF7701GTRPBF-VB |
| Package| TSSOP8 |
| Polarity| Single P-channel|
| Drain-source voltage (VDS) | -30V |
| Gate-source voltage (VGS) | ±20V |
| Threshold voltage (Vth) | -1.7V |
| On-resistance (RDS(ON)) | 20mΩ @ VGS=4.5V |
| | 16mΩ @ VGS=10V |
| Drain current (ID) | -9A |
| Technology| Trench |
Domain and module applications：
Applications and Modules
1. **Load Switch**
- The IRF7701GTRPBF-VB is ideal for load switch applications due to its low on-resistance and moderate drain current capability. In portable electronic devices, it can effectively manage and switch loads, reduce power consumption, and improve the overall efficiency of the system.
2. **Power Management**
- In power management systems, such as load switches in DC-DC converters and battery protection circuits, the IRF7701GTRPBF-VB's efficient switching capability and low RDS(ON) value help improve energy efficiency and stability. This makes it suitable for high-efficiency power modules and battery management systems, ensuring the reliability and efficiency of the power supply.
3. **Switching Circuits**
- This MOSFET is suitable for a variety of switching circuits, especially in scenarios that require negative voltage operation, such as in load driving and power switching applications. Its low on-resistance and high current handling capability (-9A) enable it to provide efficient and reliable switching performance.
4. **Automotive Electronics**
- In automotive electronics applications, the IRF7701GTRPBF-VB can be used in a variety of control and protection circuits, such as automotive power management and load switching. Its small package and efficient switching characteristics are suitable for use in space-limited automotive electronic modules to improve system reliability and performance.
1. **Load Switch**
- The IRF7701GTRPBF-VB is ideal for load switch applications due to its low on-resistance and moderate drain current capability. In portable electronic devices, it can effectively manage and switch loads, reduce power consumption, and improve the overall efficiency of the system.
2. **Power Management**
- In power management systems, such as load switches in DC-DC converters and battery protection circuits, the IRF7701GTRPBF-VB's efficient switching capability and low RDS(ON) value help improve energy efficiency and stability. This makes it suitable for high-efficiency power modules and battery management systems, ensuring the reliability and efficiency of the power supply.
3. **Switching Circuits**
- This MOSFET is suitable for a variety of switching circuits, especially in scenarios that require negative voltage operation, such as in load driving and power switching applications. Its low on-resistance and high current handling capability (-9A) enable it to provide efficient and reliable switching performance.
4. **Automotive Electronics**
- In automotive electronics applications, the IRF7701GTRPBF-VB can be used in a variety of control and protection circuits, such as automotive power management and load switching. Its small package and efficient switching characteristics are suitable for use in space-limited automotive electronic modules to improve system reliability and performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
