IRF644NS-VB Product details
Product introduction:
IRF644NS-VB is a **single-stage N-channel MOSFET** in **TO263** package. It has a **250V** high drain-source voltage (VDS), suitable for power applications that require high voltage resistance. The maximum gate-source voltage (VGS) of this MOSFET is **±20V**, and the threshold voltage (Vth) is **3.5V**. Its on-resistance (RDS(ON)) is **230mΩ** at **VGS=10V**, and the maximum leakage current (ID) is **16A**. The MOSFET uses **Trench technology**, which is designed to improve switching efficiency and reduce on-resistance, enabling it to perform well in high voltage, high current environments.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | 230mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Package**: TO263
- **Configuration**: Single-stage N-channel
- **Drain-source voltage (VDS)**: 250V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- **230mΩ at VGS = 10V**
- **Drain current (ID)**: 16A
- **Technology**: Trench
Domain and module applications:
1. **Power management**: IRF644NS-VB is suitable for **high-voltage DC-DC converters** and **switching power supplies (SMPS)**. Its high drain-source voltage and moderate on-resistance make it stable in high-power and high-voltage power management systems, and widely used in **industrial power systems** and **power conversion modules**.
2. **Motor drive**: In **motor drivers** and **motor control circuits**, the high current handling capability and voltage withstand characteristics of this MOSFET make it suitable for **industrial motor control** and **automation equipment**. It can handle large currents and provide stable motor control, suitable for a variety of motor drive applications.
3. **Lighting system**: This MOSFET is also used in **high-power LED drivers** and **lighting control systems**, especially **industrial lighting** and **automotive lighting**. Its low on-resistance helps improve the efficiency and reliability of lighting systems, ensuring long-term stable operation.
4. **Power Amplifier**: In **Power Amplifier** and **High Voltage Amplifier** applications, IRF644NS-VB can be used as a switching component to provide stable power output and thermal management capabilities. Its high current capability and low RDS(ON) characteristics make it suitable for **Audio Amplifier** and **Signal Processing** applications to improve system performance.
These applications demonstrate the excellent performance of IRF644NS-VB in high voltage and high current environments, making it an indispensable component in multiple technology fields and industries.
Technical support:
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