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IRF644NSTRR-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
**IRF644NSTRR-VB** is a high-voltage N-channel MOSFET packaged in TO263. This MOSFET has a drain-source voltage tolerance of 250V and a maximum drain current of 16A. It uses Trench technology, has a low on-resistance (RDS(ON)) and a moderate turn-on threshold voltage (Vth), and is suitable for power electronics applications that require high voltage and high current handling capabilities. IRF644NSTRR-VB performs well in various industrial and consumer electronic devices with its excellent switching performance and reliability.
**IRF644NSTRR-VB** is a high-voltage N-channel MOSFET packaged in TO263. This MOSFET has a drain-source voltage tolerance of 250V and a maximum drain current of 16A. It uses Trench technology, has a low on-resistance (RDS(ON)) and a moderate turn-on threshold voltage (Vth), and is suitable for power electronics applications that require high voltage and high current handling capabilities. IRF644NSTRR-VB performs well in various industrial and consumer electronic devices with its excellent switching performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | 230mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 250V | 3.5V | 16A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
1. **Package type**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 250V
4. **Gate-source voltage (VGS)**: ±20V
5. **Turn-on threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 230mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 16A
8. **Power dissipation**: 60W
9. **Technology**: Trench technology
10. **Operating temperature range**: -55°C to 175°C
1. **Package type**: TO263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 250V
4. **Gate-source voltage (VGS)**: ±20V
5. **Turn-on threshold voltage (Vth)**: 3.5V
6. **On-resistance (RDS(ON))**: 230mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 16A
8. **Power dissipation**: 60W
9. **Technology**: Trench technology
10. **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Application fields and module description:
**IRF644NSTRR-VB** has shown wide applicability in the following fields and modules:
1. **Switching Power Supply (SMPS)**: Due to its 250V withstand voltage capability and low on-resistance, the IRF644NSTRR-VB is very suitable for use in switching power supplies. It can handle higher currents as a power switch and maintain high efficiency in high voltage environments, suitable for high-performance power management applications such as computer power supplies and LED drivers.
2. **Motor Drive**: In motor control systems, the IRF644NSTRR-VB can handle high current motors, especially in situations where high voltage is required. Its low on-resistance helps reduce power losses and is suitable for applications such as DC motor drives and stepper motor controls.
3. **Inverters and Power Converters**: In photovoltaic inverters and other power converters, this MOSFET can effectively handle high voltage DC currents. Its good switching characteristics and high current capability make it suitable for high-efficiency power conversion and inverter applications.
4. **Power Amplifier**: In audio power amplifiers and RF power amplifiers, IRF644NSTRR-VB can be used as a power switch. Its high voltage withstand capability and low on-resistance help improve the performance of the amplifier and are suitable for high-fidelity audio and wireless communication systems.
In summary, **IRF644NSTRR-VB** provides excellent performance and reliability in applications that need to handle high voltage and high current, such as switching power supplies, motor drives, inverters, and power amplifiers.
**IRF644NSTRR-VB** has shown wide applicability in the following fields and modules:
1. **Switching Power Supply (SMPS)**: Due to its 250V withstand voltage capability and low on-resistance, the IRF644NSTRR-VB is very suitable for use in switching power supplies. It can handle higher currents as a power switch and maintain high efficiency in high voltage environments, suitable for high-performance power management applications such as computer power supplies and LED drivers.
2. **Motor Drive**: In motor control systems, the IRF644NSTRR-VB can handle high current motors, especially in situations where high voltage is required. Its low on-resistance helps reduce power losses and is suitable for applications such as DC motor drives and stepper motor controls.
3. **Inverters and Power Converters**: In photovoltaic inverters and other power converters, this MOSFET can effectively handle high voltage DC currents. Its good switching characteristics and high current capability make it suitable for high-efficiency power conversion and inverter applications.
4. **Power Amplifier**: In audio power amplifiers and RF power amplifiers, IRF644NSTRR-VB can be used as a power switch. Its high voltage withstand capability and low on-resistance help improve the performance of the amplifier and are suitable for high-fidelity audio and wireless communication systems.
In summary, **IRF644NSTRR-VB** provides excellent performance and reliability in applications that need to handle high voltage and high current, such as switching power supplies, motor drives, inverters, and power amplifiers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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