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IRF640STRLPBF-VB Product details
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1. IRF640STRLPBF-VB Product Introduction
IRF640STRLPBF-VB is a high-performance single N-channel MOSFET packaged in TO263. This MOSFET supports a drain-source voltage (VDS) of up to 200V and has a gate-source voltage (VGS) range of ±20V, suitable for high-voltage circuit design. It uses Trench technology, has low on-resistance and high current handling capability, and can operate stably under high current and high voltage conditions. The threshold voltage of IRF640STRLPBF-VB is 3V, which makes it more sensitive in responding to control signals and has excellent switching characteristics.
IRF640STRLPBF-VB is a high-performance single N-channel MOSFET packaged in TO263. This MOSFET supports a drain-source voltage (VDS) of up to 200V and has a gate-source voltage (VGS) range of ±20V, suitable for high-voltage circuit design. It uses Trench technology, has low on-resistance and high current handling capability, and can operate stably under high current and high voltage conditions. The threshold voltage of IRF640STRLPBF-VB is 3V, which makes it more sensitive in responding to control signals and has excellent switching characteristics.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. Detailed parameter description of IRF640STRLPBF-VB
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Maximum power consumption**: Limited by the heat dissipation design, it is necessary to operate within the thermal management limit of the package
- **Gate charge (Qg)**: Lower gate charge, supporting efficient and fast switching
- **Package type**: TO263
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology**: Trench
- **Maximum power consumption**: Limited by the heat dissipation design, it is necessary to operate within the thermal management limit of the package
- **Gate charge (Qg)**: Lower gate charge, supporting efficient and fast switching
Domain and module applications：
3. Application fields and module examples
1. **High voltage power switch**: The 200V drain-source voltage and low 48mΩ on-resistance of the IRF640STRLPBF-VB make it an excellent choice in high voltage power switches. It is suitable for use in high voltage switch mode power supplies (SMPS) and DC-DC converters, providing efficient power conversion and stable current control.
2. **Motor drive system**: The 40A maximum drain current handling capability of this MOSFET makes it suitable for motor drive applications, including DC motor and stepper motor control. Its stability under high current loads and low on-resistance characteristics ensure smooth and reliable motor operation.
3. **Inverter and UPS systems**: The high voltage and high current handling capabilities of the IRF640STRLPBF-VB make it an ideal choice in inverter and uninterruptible power supply (UPS) systems. Its low on-resistance helps reduce power losses and improve system efficiency and reliability.
4. **Power Management and Load Control**: In various power management and load control applications, such as power protection, battery switching, and high-power load switching, the performance of IRF640STRLPBF-VB can meet stringent requirements. Its high current handling capability and low RDS(ON) value make it suitable for scenarios requiring efficient and stable switching.
Overall, IRF640STRLPBF-VB is a versatile MOSFET suitable for a variety of electronic systems that require high voltage and high current handling, providing excellent switching performance and efficient energy conversion.
1. **High voltage power switch**: The 200V drain-source voltage and low 48mΩ on-resistance of the IRF640STRLPBF-VB make it an excellent choice in high voltage power switches. It is suitable for use in high voltage switch mode power supplies (SMPS) and DC-DC converters, providing efficient power conversion and stable current control.
2. **Motor drive system**: The 40A maximum drain current handling capability of this MOSFET makes it suitable for motor drive applications, including DC motor and stepper motor control. Its stability under high current loads and low on-resistance characteristics ensure smooth and reliable motor operation.
3. **Inverter and UPS systems**: The high voltage and high current handling capabilities of the IRF640STRLPBF-VB make it an ideal choice in inverter and uninterruptible power supply (UPS) systems. Its low on-resistance helps reduce power losses and improve system efficiency and reliability.
4. **Power Management and Load Control**: In various power management and load control applications, such as power protection, battery switching, and high-power load switching, the performance of IRF640STRLPBF-VB can meet stringent requirements. Its high current handling capability and low RDS(ON) value make it suitable for scenarios requiring efficient and stable switching.
Overall, IRF640STRLPBF-VB is a versatile MOSFET suitable for a variety of electronic systems that require high voltage and high current handling, providing excellent switching performance and efficient energy conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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