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IRF640NSTRL-VB Product details

Product introduction:

1. IRF640NSTRL-VB Product Introduction
IRF640NSTRL-VB is a high-performance single N-channel power MOSFET packaged in TO263. This MOSFET combines advanced Trench technology with low on-resistance and high current carrying capacity. Its maximum withstand voltage is 200V and the drain current can reach 40A, making it very suitable for high-power and high-voltage applications. IRF640NSTRL-VB can provide efficient switching performance and excellent thermal management, and is an ideal choice for various power management, motor drive and industrial control systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 200V 3V 40A 48mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 200V 3V 40A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 200V 3V 40A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. Detailed parameter description of IRF640NSTRL-VB
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 48mΩ @ VGS=10V
- **Maximum drain current (ID)**: 40A
- **Technology type**: Trench technology
- **Maximum power dissipation (Ptot)**: 94W
- **Operating temperature range**: -55°C to +175°C
- **Thermal resistance**: Typical value is 30°C/W (junction to ambient), 1.3°C/W (junction to case)

Domain and module applications:

III. Application fields and modules of IRF640NSTRL-VB
1. **Power management**: Due to its low on-resistance and high current carrying capacity, IRF640NSTRL-VB is very suitable for efficient switching power supplies (SMPS). It can provide stable current control and energy conversion in applications such as power adapters and DC-DC converters, reducing power consumption and improving efficiency.

2. **Industrial motor drive**: In motor drive applications, such as inverters and servo motor drives, IRF640NSTRL-VB can handle high voltages and high currents, provide reliable switching and control, and ensure smooth operation and high efficiency of the motor.

3. **Battery management system (BMS)**: The high current capability of this MOSFET makes it suitable for charge and discharge control and protection circuits in battery management systems. In the management and protection of lithium battery packs, IRF640NSTRL-VB can effectively handle high voltages and high currents to ensure the safety and stability of the system.

4. **High-voltage inverter**: IRF640NSTRL-VB can withstand high voltage of 200V, suitable for solar inverters and other high-voltage inverter systems, providing efficient energy conversion and stable current control, suitable for home and industrial photovoltaic systems.

5. **Power amplifier**: In high-power audio amplifiers, the low on-resistance and high current handling capability of this MOSFET make it suitable for amplifying and processing audio signals, providing clear and stable audio output, suitable for use in sound systems and professional audio equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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