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IRF640NSPBF-VB Product details
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IRF640NSPBF-VB MOSFET Product Introduction
IRF640NSPBF-VB is a **single-stage N-channel MOSFET** in a **TO263 package**. This MOSFET has a high drain-source voltage (VDS) of **200V**, suitable for high-voltage applications. Its maximum gate-source voltage (VGS) is **±20V**, and its threshold voltage (Vth) is **3V**, ensuring reliable switching performance. The MOSFET uses **Trench technology**, and its on-resistance (RDS(ON)) is **48mΩ** when **VGS=10V**, and its maximum drain current (ID) is **40A**. These features make the IRF640NSPBF-VB perform well in high-voltage, high-current applications.
IRF640NSPBF-VB is a **single-stage N-channel MOSFET** in a **TO263 package**. This MOSFET has a high drain-source voltage (VDS) of **200V**, suitable for high-voltage applications. Its maximum gate-source voltage (VGS) is **±20V**, and its threshold voltage (Vth) is **3V**, ensuring reliable switching performance. The MOSFET uses **Trench technology**, and its on-resistance (RDS(ON)) is **48mΩ** when **VGS=10V**, and its maximum drain current (ID) is **40A**. These features make the IRF640NSPBF-VB perform well in high-voltage, high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | 48mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 40A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package**: TO263
- **Configuration**: Single-stage N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- **48mΩ at VGS = 10V**
- **Drain current (ID)**: 40A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single-stage N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- **48mΩ at VGS = 10V**
- **Drain current (ID)**: 40A
- **Technology**: Trench
Domain and module applications：
Application examples:
1. **Power management**: IRF640NSPBF-VB is commonly used in **switching power supplies (SMPS)** and **DC-DC converters**. Its high drain-source voltage and low on-resistance characteristics enable it to effectively convert and regulate power in high-power and high-voltage environments, suitable for **industrial power supplies** and **power management modules**.
2. **Motor control**: In **motor drivers** and **control circuits**, the high current handling capability of this MOSFET makes it suitable for **industrial motors** and **automation equipment** motor control. It can withstand large currents during startup and operation, providing a stable and reliable motor control solution.
3. **Lighting systems**: This MOSFET is suitable for **high-power LED drivers** and **lighting control systems**. Its low on-resistance ensures efficient current regulation and is widely used in **industrial lighting** and **automotive lighting** systems to ensure system energy efficiency and stability.
4. **Power Amplifier**: In **Power Amplifier** applications, the IRF640NSPBF-VB can be used as a switching element to provide stable power output. Its high current capability and low RDS(ON) characteristics make it suitable for use in high-power signal processing and **audio amplifier** to improve system performance.
These applications demonstrate the excellent performance of the IRF640NSPBF-VB in high voltage and high current environments, enabling it to play a key role in multiple industries and technology fields.
1. **Power management**: IRF640NSPBF-VB is commonly used in **switching power supplies (SMPS)** and **DC-DC converters**. Its high drain-source voltage and low on-resistance characteristics enable it to effectively convert and regulate power in high-power and high-voltage environments, suitable for **industrial power supplies** and **power management modules**.
2. **Motor control**: In **motor drivers** and **control circuits**, the high current handling capability of this MOSFET makes it suitable for **industrial motors** and **automation equipment** motor control. It can withstand large currents during startup and operation, providing a stable and reliable motor control solution.
3. **Lighting systems**: This MOSFET is suitable for **high-power LED drivers** and **lighting control systems**. Its low on-resistance ensures efficient current regulation and is widely used in **industrial lighting** and **automotive lighting** systems to ensure system energy efficiency and stability.
4. **Power Amplifier**: In **Power Amplifier** applications, the IRF640NSPBF-VB can be used as a switching element to provide stable power output. Its high current capability and low RDS(ON) characteristics make it suitable for use in high-power signal processing and **audio amplifier** to improve system performance.
These applications demonstrate the excellent performance of the IRF640NSPBF-VB in high voltage and high current environments, enabling it to play a key role in multiple industries and technology fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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