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IRF640FP-VB Product details
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Product Introduction: IRF640FP-VB
IRF640FP-VB is a single N-channel power MOSFET packaged in TO220F, using trench technology (Trench). It has a drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 18A. The gate drive voltage (VGS) range of this MOSFET is ±20V, with a threshold voltage (Vth) of 3V. When VGS is 10V, its on-resistance (RDS(ON)) is 200mΩ. IRF640FP-VB is suitable for applications requiring high voltage and high current, such as switching power supplies, DC-DC converters, and motor control.
IRF640FP-VB is a single N-channel power MOSFET packaged in TO220F, using trench technology (Trench). It has a drain-source voltage (VDS) of 200V and a continuous drain current (ID) of 18A. The gate drive voltage (VGS) range of this MOSFET is ±20V, with a threshold voltage (Vth) of 3V. When VGS is 10V, its on-resistance (RDS(ON)) is 200mΩ. IRF640FP-VB is suitable for applications requiring high voltage and high current, such as switching power supplies, DC-DC converters, and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 18A | 200mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
Detailed parameter description:
- **Model**: IRF640FP-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 200mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 18A
- **Maximum power dissipation (Ptot)**: 94W
- **Operating junction temperature range**: -55°C ~ +150°C
- **Technology**: Trench technology
- **Model**: IRF640FP-VB
- **Package type**: TO220F
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 200mΩ @ VGS = 10V
- **Continuous drain current (ID)**: 18A
- **Maximum power dissipation (Ptot)**: 94W
- **Operating junction temperature range**: -55°C ~ +150°C
- **Technology**: Trench technology
Domain and module applications：
Applicable fields and application modules:
1. **Switching Power Supplies**: IRF640FP-VB is an ideal choice for high voltage switching power supply designs, especially when large currents need to be handled. Its high VDS (200V) and good on-resistance (200mΩ) enable it to efficiently convert power while reducing energy losses, and is widely used in industrial power supplies and computer power systems.
2. **DC-DC Converters**: In DC-DC converters, this MOSFET can be used for high current and high voltage conversion processes to provide a stable output voltage. Due to its high current handling capability (18A) and low RDS(ON), it can improve the overall efficiency of the system and reduce power losses, and is suitable for a variety of power conversion applications, such as battery-powered devices and automotive power management systems.
3. **Motor Control**: IRF640FP-VB is also suitable for motor drive and control applications, especially in medium and high power motor control systems. Its high current handling capability and low on-resistance enable it to efficiently control the start, stop and speed regulation of the motor, improving the performance and reliability of the motor control system.
4. **Battery Management Systems (BMS)**: In the battery management system, the IRF640FP-VB can be used for the current control and protection circuit of the battery. Due to its high voltage tolerance and high current handling capability, it can effectively manage and protect the battery pack, improving the battery life and safety.
The high voltage and high current characteristics of the IRF640FP-VB enable it to perform well in multiple power electronics applications, especially in scenarios that require efficient and reliable power switches.
1. **Switching Power Supplies**: IRF640FP-VB is an ideal choice for high voltage switching power supply designs, especially when large currents need to be handled. Its high VDS (200V) and good on-resistance (200mΩ) enable it to efficiently convert power while reducing energy losses, and is widely used in industrial power supplies and computer power systems.
2. **DC-DC Converters**: In DC-DC converters, this MOSFET can be used for high current and high voltage conversion processes to provide a stable output voltage. Due to its high current handling capability (18A) and low RDS(ON), it can improve the overall efficiency of the system and reduce power losses, and is suitable for a variety of power conversion applications, such as battery-powered devices and automotive power management systems.
3. **Motor Control**: IRF640FP-VB is also suitable for motor drive and control applications, especially in medium and high power motor control systems. Its high current handling capability and low on-resistance enable it to efficiently control the start, stop and speed regulation of the motor, improving the performance and reliability of the motor control system.
4. **Battery Management Systems (BMS)**: In the battery management system, the IRF640FP-VB can be used for the current control and protection circuit of the battery. Due to its high voltage tolerance and high current handling capability, it can effectively manage and protect the battery pack, improving the battery life and safety.
The high voltage and high current characteristics of the IRF640FP-VB enable it to perform well in multiple power electronics applications, especially in scenarios that require efficient and reliable power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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