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IRF630NS-VB Product details
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IRF630NS-VB MOSFET Product Introduction:
IRF630NS-VB is a unipolar N-type MOSFET based on trench technology, designed to handle high voltage and medium current loads. It is packaged in a TO263 package with a VDS voltage of **200V**, a VGS tolerance of **±20V**, and a threshold voltage (Vth) of **3V**. The MOSFET has an RDS(ON) of 300mΩ** at **VGS=10V** and supports a continuous leakage current of **10A**. The trench technology gives it a lower on-resistance, making it suitable for power switching applications.
IRF630NS-VB is a unipolar N-type MOSFET based on trench technology, designed to handle high voltage and medium current loads. It is packaged in a TO263 package with a VDS voltage of **200V**, a VGS tolerance of **±20V**, and a threshold voltage (Vth) of **3V**. The MOSFET has an RDS(ON) of 300mΩ** at **VGS=10V** and supports a continuous leakage current of **10A**. The trench technology gives it a lower on-resistance, making it suitable for power switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | 300mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package type**: TO263
- **Configuration**: Unipolar N-type
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 10A
- **Technology**: Channel
- **Power consumption (Ptot)**: Typical value is about 50W
- **Operating temperature range**: -55°C to 175°C
- **Package type**: TO263
- **Configuration**: Unipolar N-type
- **Drain-source voltage (VDS)**: 200V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 300mΩ @ VGS=10V
- **Continuous leakage current (ID)**: 10A
- **Technology**: Channel
- **Power consumption (Ptot)**: Typical value is about 50W
- **Operating temperature range**: -55°C to 175°C
Domain and module applications：
Application fields and module examples:
1. **Power supply system**: IRF630NS-VB MOSFET is widely used in systems such as **DC-DC converters**, **switching power supplies (SMPS)** and **battery chargers**. Its high voltage rating of 200V and trench technology help achieve efficient power conversion, especially in systems where heat dissipation and switching efficiency are critical.
2. **Motor drive and control**: In **motor control circuits**, this MOSFET can be used as a switching component for **low to medium power motor drivers**. Its medium current load capability (10A) and high voltage operation make it suitable for motor drives in home appliances and industrial equipment.
3. **Lighting applications**: It can also be used in **LED drivers** and other **lighting control circuits**. Trench technology ensures low losses during switching, helping to achieve high-efficiency lighting solutions.
4. **Uninterruptible Power Supply (UPS)**: In **UPS systems**, the IRF630NS-VB is suitable for use in the power conversion stage to ensure stable output voltage and handle inrush current.
5. **Renewable Energy Systems**: In **solar inverters** and **wind power converters**, this MOSFET plays an important role in the power switching stage to ensure reliable performance in high voltage environments.
1. **Power supply system**: IRF630NS-VB MOSFET is widely used in systems such as **DC-DC converters**, **switching power supplies (SMPS)** and **battery chargers**. Its high voltage rating of 200V and trench technology help achieve efficient power conversion, especially in systems where heat dissipation and switching efficiency are critical.
2. **Motor drive and control**: In **motor control circuits**, this MOSFET can be used as a switching component for **low to medium power motor drivers**. Its medium current load capability (10A) and high voltage operation make it suitable for motor drives in home appliances and industrial equipment.
3. **Lighting applications**: It can also be used in **LED drivers** and other **lighting control circuits**. Trench technology ensures low losses during switching, helping to achieve high-efficiency lighting solutions.
4. **Uninterruptible Power Supply (UPS)**: In **UPS systems**, the IRF630NS-VB is suitable for use in the power conversion stage to ensure stable output voltage and handle inrush current.
5. **Renewable Energy Systems**: In **solar inverters** and **wind power converters**, this MOSFET plays an important role in the power switching stage to ensure reliable performance in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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