IRF630MFP-VB Product details
Product introduction:
IRF630MFP-VB is a high voltage single N-channel MOSFET packaged in TO-220F and using Trench process technology. This MOSFET is designed for high voltage applications and has a maximum drain-source voltage capability of 200V, suitable for handling high voltage loads. While maintaining a low on-resistance (265mΩ @ VGS=10V), the IRF630MFP-VB can withstand a maximum drain current of 10A, making it excellent in applications requiring high voltage and stable switching operation. Its Trench process technology ensures excellent switching performance and efficient current control.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | 265mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 200V | 3V | 10A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- **Package**: TO-220F
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**: 265mΩ @ VGS=10V
- **Maximum drain current (ID)**: 10A
- **Technology**: Trench
Domain and module applications:
1. **High voltage switching power supply**
The IRF630MFP-VB is ideal for high voltage switching power supply systems. Its 200V maximum drain-source voltage capability enables it to handle high voltage loads, and its low on-resistance helps reduce switching losses and improve the overall efficiency of the system. The MOSFET is able to stably switch, thereby ensuring the stability and reliability of the power supply.
2. **Power amplifier circuit**
In the power amplifier circuit, the IRF630MFP-VB can effectively handle high voltage applications and is suitable for equipment such as broadcasting, audio and wireless communications. Its low on-resistance ensures efficient signal amplification and provides stable power output, which helps to improve the performance and signal quality of the equipment.
3. **Motor drive control**
The IRF630MFP-VB is also suitable for high voltage motor drive control systems. During the start, stop and speed regulation of the motor, the MOSFET can effectively control the current flow and maintain the stable operation of the motor. Its high voltage withstand capability and low on-resistance make it an excellent performer in motor control applications.
4. **High Voltage Protection Circuit**
This MOSFET also plays an important role in high voltage protection circuits. Its 200V withstand capability enables it to effectively protect circuits from overvoltage and prevent damage caused by current overload. IRF630MFP-VB is widely used in overvoltage protection and current protection modules, helping to improve system safety and stability.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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