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IRF5852TRPBF-VB Product details
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IRF5852TRPBF-VB MOSFET Product Introduction
The IRF5852TRPBF-VB is a dual N-channel power MOSFET in a SOT23-6 package based on trench technology. This MOSFET is designed for low voltage applications with a drain-source voltage of 20V and a maximum drain current of 6A. Its low on-resistance and wide threshold voltage range make it excel in compact circuits and high-efficiency switching applications, and is suitable for electronic devices that require high switching frequency and low on-resistance.
The IRF5852TRPBF-VB is a dual N-channel power MOSFET in a SOT23-6 package based on trench technology. This MOSFET is designed for low voltage applications with a drain-source voltage of 20V and a maximum drain current of 6A. Its low on-resistance and wide threshold voltage range make it excel in compact circuits and high-efficiency switching applications, and is suitable for electronic devices that require high switching frequency and low on-resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 20V | 0.5~1.5V | 6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
Detailed parameter description
1. **Package type**: SOT23-6
2. **Configuration**: Dual N-channel
3. **Drain-source voltage (VDS)**: 20V
4. **Gate-source voltage (VGS)**: ±12V
5. **Threshold voltage (Vth)**: 0.5~1.5V
6. **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
7. **Maximum drain current (ID)**: 6A
8. **Technology type**: Trench
1. **Package type**: SOT23-6
2. **Configuration**: Dual N-channel
3. **Drain-source voltage (VDS)**: 20V
4. **Gate-source voltage (VGS)**: ±12V
5. **Threshold voltage (Vth)**: 0.5~1.5V
6. **On-resistance (RDS(ON))**:
- 28mΩ @ VGS=2.5V
- 22mΩ @ VGS=4.5V
7. **Maximum drain current (ID)**: 6A
8. **Technology type**: Trench
Domain and module applications：
Applications and applicable modules
1. **Power management**: The IRF5852TRPBF-VB is ideal for power management applications due to its low on-resistance and low threshold voltage. It can be used as a switching element in power switches and DC-DC converters to achieve efficient current control and energy conversion. In mobile phone chargers and power modules for portable devices, this MOSFET can provide efficient energy conversion and stable power supply.
2. **Load switch**: In various electronic devices, the IRF5852TRPBF-VB can be used as a load switch to control and manage low-voltage loads. Its low RDS(ON) and high current capability make it suitable for use in switch control circuits such as load switching circuits and LED driver modules.
3. **Power management**: This MOSFET is suitable for various power management applications such as battery protection and power distribution systems. It can handle higher current loads and maintain stability in high-frequency switching operations, making it suitable for battery-powered devices and high-efficiency power management systems.
4. **Switching circuit**: Due to its compact SOT23-6 package and high switching frequency capability, the IRF5852TRPBF-VB is an ideal choice for high-frequency switching circuits. It can be used as a switching element in small switching circuits and integrated circuits to achieve efficient and reliable switching operations, suitable for consumer electronics, communication equipment and industrial control systems.
1. **Power management**: The IRF5852TRPBF-VB is ideal for power management applications due to its low on-resistance and low threshold voltage. It can be used as a switching element in power switches and DC-DC converters to achieve efficient current control and energy conversion. In mobile phone chargers and power modules for portable devices, this MOSFET can provide efficient energy conversion and stable power supply.
2. **Load switch**: In various electronic devices, the IRF5852TRPBF-VB can be used as a load switch to control and manage low-voltage loads. Its low RDS(ON) and high current capability make it suitable for use in switch control circuits such as load switching circuits and LED driver modules.
3. **Power management**: This MOSFET is suitable for various power management applications such as battery protection and power distribution systems. It can handle higher current loads and maintain stability in high-frequency switching operations, making it suitable for battery-powered devices and high-efficiency power management systems.
4. **Switching circuit**: Due to its compact SOT23-6 package and high switching frequency capability, the IRF5852TRPBF-VB is an ideal choice for high-frequency switching circuits. It can be used as a switching element in small switching circuits and integrated circuits to achieve efficient and reliable switching operations, suitable for consumer electronics, communication equipment and industrial control systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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