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IRF5810TRPBF-VB Product details
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IRF5810TRPBF-VB Product Introduction
IRF5810TRPBF-VB is a dual-channel P-channel MOSFET in SOT23-6 package, designed for high-performance and compact design applications. This MOSFET is suitable for low-voltage applications, with a drain-source voltage (VDS) of -20V, moderate on-resistance (RDS(ON)), and efficient switching performance. MOSFET adopts trench technology (Trench), providing excellent current switching characteristics and low power consumption characteristics, suitable for various power management and load switch modules.
IRF5810TRPBF-VB is a dual-channel P-channel MOSFET in SOT23-6 package, designed for high-performance and compact design applications. This MOSFET is suitable for low-voltage applications, with a drain-source voltage (VDS) of -20V, moderate on-resistance (RDS(ON)), and efficient switching performance. MOSFET adopts trench technology (Trench), providing excellent current switching characteristics and low power consumption characteristics, suitable for various power management and load switch modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -20V | -0.6V | -4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
IRF5810TRPBF-VB Detailed parameters
- **Package type**: SOT23-6
- **Configuration**: Dual-channel P+P channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**: 100mΩ@VGS=2.5V
- **On-resistance (RDS(ON))**: 75mΩ@VGS=4.5V
- **Drain current (ID)**: -4A
- **Technology**: Trench technology
- **Typical applications**: Power switch, load switch, switching power supply, low voltage circuit
- **Package type**: SOT23-6
- **Configuration**: Dual-channel P+P channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±12V
- **Threshold voltage (Vth)**: -0.6V
- **On-resistance (RDS(ON))**: 100mΩ@VGS=2.5V
- **On-resistance (RDS(ON))**: 75mΩ@VGS=4.5V
- **Drain current (ID)**: -4A
- **Technology**: Trench technology
- **Typical applications**: Power switch, load switch, switching power supply, low voltage circuit
Domain and module applications：
Applications and modules
1. **Power switch**: The IRF5810TRPBF-VB is suitable for low-voltage power switching applications. Its -20V drain-source voltage and low on-resistance enable it to efficiently switch low-voltage power supplies in power management systems, such as controlling current flow in DC-DC converters and AC-DC power supplies.
2. **Load switch**: In load switch applications, the IRF5810TRPBF-VB can effectively control low-voltage loads. Its dual-channel P-channel configuration saves space on small circuit boards while providing reliable load switching functions, and is widely used in portable electronic devices and small household appliances.
3. **Switching power supply**: In switching power supply design, the IRF5810TRPBF-VB's efficient switching characteristics and low on-resistance make it suitable for controlling current flow in low-voltage switching power supplies, improving the overall efficiency and reliability of the power supply.
4. **Low Voltage Circuit**: Due to its excellent low voltage performance and compact SOT23-6 package, the IRF5810TRPBF-VB is particularly suitable for various low voltage circuit designs, such as power switches and protection circuits in mobile devices and low-power electronic products.
These application examples demonstrate the wide applicability of the IRF5810TRPBF-VB in power switches, load switches, switching power supplies, and low voltage circuits, and can meet various low voltage and medium current processing needs.
1. **Power switch**: The IRF5810TRPBF-VB is suitable for low-voltage power switching applications. Its -20V drain-source voltage and low on-resistance enable it to efficiently switch low-voltage power supplies in power management systems, such as controlling current flow in DC-DC converters and AC-DC power supplies.
2. **Load switch**: In load switch applications, the IRF5810TRPBF-VB can effectively control low-voltage loads. Its dual-channel P-channel configuration saves space on small circuit boards while providing reliable load switching functions, and is widely used in portable electronic devices and small household appliances.
3. **Switching power supply**: In switching power supply design, the IRF5810TRPBF-VB's efficient switching characteristics and low on-resistance make it suitable for controlling current flow in low-voltage switching power supplies, improving the overall efficiency and reliability of the power supply.
4. **Low Voltage Circuit**: Due to its excellent low voltage performance and compact SOT23-6 package, the IRF5810TRPBF-VB is particularly suitable for various low voltage circuit designs, such as power switches and protection circuits in mobile devices and low-power electronic products.
These application examples demonstrate the wide applicability of the IRF5810TRPBF-VB in power switches, load switches, switching power supplies, and low voltage circuits, and can meet various low voltage and medium current processing needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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