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IRF5806TRPBF-VB Product details

Product introduction:

Product Introduction - IRF5806TRPBF-VB

The IRF5806TRPBF-VB is a high-performance P-channel MOSFET in a SOT23-6 package and designed based on Trench technology. This MOSFET has a drain-source withstand voltage of -30V and a maximum drain current handling capability of -4.8A. The low on-resistance (54mΩ @ VGS=4.5V and 49mΩ @ VGS=10V) and efficient switching performance of the IRF5806TRPBF-VB make it very suitable for applications requiring efficient switching and low power consumption. This MOSFET is particularly suitable for use in portable devices and low-voltage power management systems, providing efficient and reliable performance with its excellent current control capability and compact package.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Single-P -30V -1.7V -4.8A 49mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Single-P -30V -1.7V -4.8A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Single-P
Parameter description
- **Model:** IRF5806TRPBF-VB
- **Package:** SOT23-6
- **Channel type:** Single P-channel
- **Maximum drain-source voltage (VDS):** -30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 54mΩ @ VGS=4.5V
- 49mΩ @ VGS=10V
- **Maximum continuous drain current (ID):** -4.8A
- **Technology:** Trench technology
- **Maximum power consumption:** 1.6W (depending on heat dissipation conditions)
- **Operating temperature range:** -55°C to 150°C

Domain and module applications:

Applications and modules

1. **Power management**
The low on-resistance and compact SOT23-6 package of IRF5806TRPBF-VB make it ideal for power management applications. It can provide efficient switching performance in DC-DC converters, load switches, and power protection circuits, reducing power consumption and improving overall system efficiency.

2. **Portable devices**
Due to its compact package and efficient performance, IRF5806TRPBF-VB is suitable for portable electronic devices such as smartphones, tablets, and wearable devices. It can provide reliable current control in a limited space, supporting low-power operation and high performance of the device.

3. **Low voltage power supply**
In low-voltage power supply systems, the -30V withstand voltage and good switching characteristics of IRF5806TRPBF-VB make it an ideal choice. It can be used in battery management, voltage regulators, and power switches to provide stable power control and ensure system reliability and stability.

4. **Switching Applications**
IRF5806TRPBF-VB can also be used in a variety of switching applications. Its efficient switching capability and low on-resistance make it an excellent performer in switching power supplies (SMPS), load switches, and signal switch modules, which can effectively control current and improve the response speed of the system.

Overall, IRF5806TRPBF-VB is a high-performance P-channel MOSFET suitable for a variety of high-efficiency and low-power applications, including power management, portable devices, low-voltage power supplies, and switching applications. Its small package and excellent performance make it play an important role in modern electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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