IRF5802TRPBF-VB Product details
Product introduction:
IRF5802TRPBF-VB is a single-channel N-type MOSFET in SOT23-6 package, designed for high voltage and medium current applications. The MOSFET supports drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V, and uses advanced trench technology to provide excellent switching performance and low on-resistance. IRF5802TRPBF-VB can handle drain currents up to 3.2A and is suitable for a variety of miniaturized and compact circuit applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | 95mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 100V | 1.8V | 3.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
1. **Package type**: SOT23-6
2. **Configuration**: Single channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**: 105mΩ @ VGS=4.5V
7. **On-resistance (RDS(ON))**: 95mΩ @ VGS=10V
8. **Drain current (ID)**: 3.2A
9. **Technology**: Trench technology
10. **Power dissipation**: Please refer to the data sheet for specific values.
11. **Operating temperature range**: Please refer to the data sheet for specific values.
Domain and module applications:
1. **Mobile devices**: Since the IRF5802TRPBF-VB uses a small SOT23-6 package, it is very suitable for mobile devices and portable electronic products with limited space. For example, it can be used as a power switch and load switch in smartphones and battery-powered portable devices, providing efficient current control and low power consumption.
2. **Consumer electronics**: In consumer electronics such as TVs, home appliances and audio systems, the medium current and high voltage handling capabilities of this MOSFET make it an effective switching component. It can be used for power management and signal switching to optimize the performance and reliability of the device.
3. **Power management**: The IRF5802TRPBF-VB performs well in small power management modules. For example, in DC-DC converters and power distribution systems, it can be used as a load switch to handle high-voltage power conversion and current control to ensure stable operation of the power system.
4. **LED Driver**: In LED driver applications, this MOSFET can be used as a high-voltage switch to control the brightness and on/off state of the LED. Its small package and good conduction performance make it suitable for various compact LED drive circuits, providing stable current control and efficiency.
5. **Motor Control**: In small motor drive systems, the IRF5802TRPBF-VB can be used for motor start/stop and speed control. Its high voltage and medium current handling capabilities enable it to effectively control the operation of the motor, optimize motor performance and improve system efficiency.
Through these applications, the IRF5802TRPBF-VB demonstrates its excellent performance in miniaturization and high-voltage switching applications, and is a key component in various mobile devices, consumer electronics and power management systems.
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