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IRF5801TRPBF-VB Product details
Back to previous pageProduct introduction：
Product Introduction:
IRF5801TRPBF-VB is a high voltage N-channel MOSFET in SOT23-6 package. This MOSFET is designed for medium and high voltage applications, supports drain-source voltage up to 200V, and gate voltage range is ±20V. Its threshold voltage is 3V, and it uses advanced trench technology to provide relatively low on-resistance. IRF5801TRPBF-VB can handle drain current up to 4A and is suitable for electronic circuits requiring medium power and high voltage.
IRF5801TRPBF-VB is a high voltage N-channel MOSFET in SOT23-6 package. This MOSFET is designed for medium and high voltage applications, supports drain-source voltage up to 200V, and gate voltage range is ±20V. Its threshold voltage is 3V, and it uses advanced trench technology to provide relatively low on-resistance. IRF5801TRPBF-VB can handle drain current up to 4A and is suitable for electronic circuits requiring medium power and high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 200V | 3V | 4A | 160mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 200V | 3V | 4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N | 200V | 3V | 4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-N |
Detailed parameter description:
- **Package type**: SOT23-6
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 200mΩ @ VGS=4.5V
- 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Trench Technology
- **Package type**: SOT23-6
- **Channel configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 200V
- **Gate voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 3V
- **On-resistance (RDS(ON))**:
- 200mΩ @ VGS=4.5V
- 160mΩ @ VGS=10V
- **Maximum drain current (ID)**: 4A
- **Technology**: Trench Technology
Domain and module applications：
Applications and module examples:
1. **High Voltage Switch**: The IRF5801TRPBF-VB is suitable for applications that require high voltage switching, such as power converters, inverters, and high voltage power management systems. Its high voltage capability and moderate on-resistance enable it to operate efficiently in high voltage environments while handling higher power loads.
2. **Electronic Load**: In high voltage electronic load testing and battery management systems, this MOSFET can be used as a switching element. Its high drain-source voltage and stable switching performance are suitable for applications that require testing and regulating current, such as battery testers and electronic load equipment.
3. **Industrial Control Systems**: The IRF5801TRPBF-VB can be used for power switching and load driving applications in industrial control systems. Its high voltage and current handling capabilities make it suitable for controlling the power supply of industrial equipment and performing switching operations of high voltage loads.
4. **Consumer Electronics**: In consumer electronics, this MOSFET can be used for power management and high voltage switching applications. Its relatively low on-resistance and high voltage carrying capability make it suitable for applications requiring high voltage switching and power regulation, such as advanced audio equipment, TVs and home appliances.
1. **High Voltage Switch**: The IRF5801TRPBF-VB is suitable for applications that require high voltage switching, such as power converters, inverters, and high voltage power management systems. Its high voltage capability and moderate on-resistance enable it to operate efficiently in high voltage environments while handling higher power loads.
2. **Electronic Load**: In high voltage electronic load testing and battery management systems, this MOSFET can be used as a switching element. Its high drain-source voltage and stable switching performance are suitable for applications that require testing and regulating current, such as battery testers and electronic load equipment.
3. **Industrial Control Systems**: The IRF5801TRPBF-VB can be used for power switching and load driving applications in industrial control systems. Its high voltage and current handling capabilities make it suitable for controlling the power supply of industrial equipment and performing switching operations of high voltage loads.
4. **Consumer Electronics**: In consumer electronics, this MOSFET can be used for power management and high voltage switching applications. Its relatively low on-resistance and high voltage carrying capability make it suitable for applications requiring high voltage switching and power regulation, such as advanced audio equipment, TVs and home appliances.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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