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IRF530SPBF-VB Product details
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Product Introduction: IRF530SPBF-VB
IRF530SPBF-VB is a high-performance single N-channel MOSFET packaged in TO-263 and using Trench process technology. This MOSFET is designed to handle medium-to-high voltage and medium-current applications, providing reliable switching performance and low on-resistance. IRF530SPBF-VB can work stably in high voltage and high current environments, and is an ideal choice for a variety of electronic devices and power systems.
IRF530SPBF-VB is a high-performance single N-channel MOSFET packaged in TO-263 and using Trench process technology. This MOSFET is designed to handle medium-to-high voltage and medium-current applications, providing reliable switching performance and low on-resistance. IRF530SPBF-VB can work stably in high voltage and high current environments, and is an ideal choice for a variety of electronic devices and power systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description:
- **Package**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
- **Package**: TO-263
- **Channel type**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Turn-on threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
Application fields and module examples:
1. **Switching power supply**
IRF530SPBF-VB is suitable for switching power supply systems. Its high voltage tolerance and medium on-resistance enable it to effectively control the switching operation of the power supply. It can handle high voltage loads to ensure the efficiency and stability of the power supply system.
2. **Motor drive**
In motor drive applications, IRF530SPBF-VB can effectively manage the start, stop and speed regulation of the motor. Its high current carrying capacity makes it suitable for various motor control systems to improve the performance and reliability of motor drives.
3. **Battery management system**
This MOSFET is also widely used in battery management systems, especially in battery charging and discharging control. Its low on-resistance helps reduce power loss and ensures the efficiency and stability of battery management.
4. **Power amplifier circuit**
IRF530SPBF-VB can be used in power amplifier circuits, especially in situations where high voltage and high current need to be handled. Its excellent conduction characteristics make it suitable for high-power amplification applications such as broadcasting and communications, ensuring stable and efficient signal transmission.
1. **Switching power supply**
IRF530SPBF-VB is suitable for switching power supply systems. Its high voltage tolerance and medium on-resistance enable it to effectively control the switching operation of the power supply. It can handle high voltage loads to ensure the efficiency and stability of the power supply system.
2. **Motor drive**
In motor drive applications, IRF530SPBF-VB can effectively manage the start, stop and speed regulation of the motor. Its high current carrying capacity makes it suitable for various motor control systems to improve the performance and reliability of motor drives.
3. **Battery management system**
This MOSFET is also widely used in battery management systems, especially in battery charging and discharging control. Its low on-resistance helps reduce power loss and ensures the efficiency and stability of battery management.
4. **Power amplifier circuit**
IRF530SPBF-VB can be used in power amplifier circuits, especially in situations where high voltage and high current need to be handled. Its excellent conduction characteristics make it suitable for high-power amplification applications such as broadcasting and communications, ensuring stable and efficient signal transmission.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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