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IRF5210STRR-VB Product details
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IRF5210STRR-VB Product Introduction
**IRF5210STRR-VB** is a high-performance single P-channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for high voltage and high current loads. Its main features include higher drain-source voltage (VDS) and lower on-resistance, suitable for various power switching and load control applications. The maximum drain voltage of IRF5210STRR-VB is -100V, the maximum gate voltage is ±20V, and the threshold voltage is -2V, which makes it stable in negative voltage environment.
**IRF5210STRR-VB** is a high-performance single P-channel MOSFET in TO263 package. This MOSFET adopts Trench technology and is designed for high voltage and high current loads. Its main features include higher drain-source voltage (VDS) and lower on-resistance, suitable for various power switching and load control applications. The maximum drain voltage of IRF5210STRR-VB is -100V, the maximum gate voltage is ±20V, and the threshold voltage is -2V, which makes it stable in negative voltage environment.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -100V | -2V | -37A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -37A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -2V
- **On-resistance (RDS(ON))**:
- 50mΩ @ VGS = 4.5V
- 40mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -37A
- **Technology**: Trench
Domain and module applications：
Applications and modules
**1. Power switch**
IRF5210STRR-VB is suitable for power switch applications with high voltage loads. Its high drain-source voltage (VDS) and low on-resistance enable it to operate stably in high voltage environments, especially suitable for load switches of high voltage power supplies, providing reliable current control and switching performance.
**2. High voltage load control**
In applications where high voltage loads need to be controlled, IRF5210STRR-VB can provide stable performance. Its high voltage carrying capacity and low on-resistance enable it to effectively control high voltage currents, suitable for switching and regulating high voltage loads.
**3. DC-DC converter**
IRF5210STRR-VB also performs well in DC-DC converters, especially in negative voltage environments. It can effectively handle high current loads during negative voltage conversion, suitable for negative voltage buck or boost converter applications.
**4. Motor drive**
In motor drive applications, IRF5210STRR-VB can be used as a P-channel MOSFET to control the load current of the motor. Its high voltage capability and low on-resistance enable it to provide stable and efficient performance in motor control systems, and is particularly suitable for motor applications that require high voltage drive.
These applications demonstrate the wide applicability of IRF5210STRR-VB in high voltage and high current environments, especially in power switches, load control, DC-DC converters, and motor drive systems. It provides efficient and stable performance.
**1. Power switch**
IRF5210STRR-VB is suitable for power switch applications with high voltage loads. Its high drain-source voltage (VDS) and low on-resistance enable it to operate stably in high voltage environments, especially suitable for load switches of high voltage power supplies, providing reliable current control and switching performance.
**2. High voltage load control**
In applications where high voltage loads need to be controlled, IRF5210STRR-VB can provide stable performance. Its high voltage carrying capacity and low on-resistance enable it to effectively control high voltage currents, suitable for switching and regulating high voltage loads.
**3. DC-DC converter**
IRF5210STRR-VB also performs well in DC-DC converters, especially in negative voltage environments. It can effectively handle high current loads during negative voltage conversion, suitable for negative voltage buck or boost converter applications.
**4. Motor drive**
In motor drive applications, IRF5210STRR-VB can be used as a P-channel MOSFET to control the load current of the motor. Its high voltage capability and low on-resistance enable it to provide stable and efficient performance in motor control systems, and is particularly suitable for motor applications that require high voltage drive.
These applications demonstrate the wide applicability of IRF5210STRR-VB in high voltage and high current environments, especially in power switches, load control, DC-DC converters, and motor drive systems. It provides efficient and stable performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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