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IRF520VS-VB Product details
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IRF520VS-VB Product Introduction
IRF520VS-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage environment. It has a drain-source voltage (VDS) up to 100V and a moderate on-resistance (RDS(ON)), which enables it to maintain high efficiency and stability when handling medium current and high voltage applications. MOSFET adopts trench technology (Trench), providing excellent switching performance and low power consumption characteristics, suitable for power management and load switching and other fields.
IRF520VS-VB is a high-performance N-channel MOSFET in TO263 package, designed for high voltage environment. It has a drain-source voltage (VDS) up to 100V and a moderate on-resistance (RDS(ON)), which enables it to maintain high efficiency and stability when handling medium current and high voltage applications. MOSFET adopts trench technology (Trench), providing excellent switching performance and low power consumption characteristics, suitable for power management and load switching and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
IRF520VS-VB Detailed parameters
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ@VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench technology
- **Typical applications**: Power switching, power management, motor control
- **Package type**: TO263
- **Configuration**: Single N-channel
- **Drain-source voltage (VDS)**: 100V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ@VGS=10V
- **Drain current (ID)**: 20A
- **Technology**: Trench technology
- **Typical applications**: Power switching, power management, motor control
Domain and module applications：
Applications and modules
1. **Power switch**: IRF520VS-VB is very suitable for use as a power switch, especially in high voltage applications. Its 100V drain-source voltage (VDS) can handle high voltage power switching requirements and is suitable for DC-DC converters, AC-DC power supplies, and power protection circuits. The stable switching performance and moderate on-resistance of MOSFET enable it to effectively control power switching operations.
2. **Power management**: In power management systems, IRF520VS-VB can be used for power control and regulation in high voltage environments. Its high drain-source voltage and low on-resistance help optimize power conversion efficiency and achieve efficient power management. It is widely used in power converters and power conditioning modules.
3. **Motor control**: IRF520VS-VB performs well in DC motor control systems. Its high voltage tolerance and stable performance make it suitable for use in motor drives, which can efficiently control the switching and operating status of motors. It is particularly suitable for industrial motor control and high-power power tools.
4. **Switching Power Supply**: The high voltage tolerance and stable switching performance of IRF520VS-VB make it an ideal choice in switching power supply (SMPS) design. MOSFET can effectively control the current in high voltage switching applications, optimizing the efficiency and reliability of switching power supplies.
These application examples show the wide applicability of IRF520VS-VB in power switching, power management, motor control and switching power supplies, and can meet various high voltage and current handling needs.
1. **Power switch**: IRF520VS-VB is very suitable for use as a power switch, especially in high voltage applications. Its 100V drain-source voltage (VDS) can handle high voltage power switching requirements and is suitable for DC-DC converters, AC-DC power supplies, and power protection circuits. The stable switching performance and moderate on-resistance of MOSFET enable it to effectively control power switching operations.
2. **Power management**: In power management systems, IRF520VS-VB can be used for power control and regulation in high voltage environments. Its high drain-source voltage and low on-resistance help optimize power conversion efficiency and achieve efficient power management. It is widely used in power converters and power conditioning modules.
3. **Motor control**: IRF520VS-VB performs well in DC motor control systems. Its high voltage tolerance and stable performance make it suitable for use in motor drives, which can efficiently control the switching and operating status of motors. It is particularly suitable for industrial motor control and high-power power tools.
4. **Switching Power Supply**: The high voltage tolerance and stable switching performance of IRF520VS-VB make it an ideal choice in switching power supply (SMPS) design. MOSFET can effectively control the current in high voltage switching applications, optimizing the efficiency and reliability of switching power supplies.
These application examples show the wide applicability of IRF520VS-VB in power switching, power management, motor control and switching power supplies, and can meet various high voltage and current handling needs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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