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IRF520STRR-VB Product details

Product introduction:

Product Introduction: IRF520STRR-VB

IRF520STRR-VB is a single-channel N-type MOSFET in TO263 package, designed for medium-to-high voltage and medium current applications. The MOSFET supports drain-source voltage (VDS) up to 100V and gate-source voltage (VGS) of ±20V, and uses advanced trench technology to provide stable switching performance and low on-resistance. IRF520STRR-VB can handle drain currents up to 20A and is suitable for a variety of power management and switching applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 100V 1.8V 20A 100mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 100V 1.8V 20A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 100V 1.8V 20A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
Detailed parameter description:
1. **Package type**: TO263
2. **Configuration**: Single channel N-type MOSFET
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**: 100mΩ @ VGS=10V
7. **Drain current (ID)**: 20A
8. **Technology**: Trench technology
9. **Power dissipation**: Please refer to the data sheet for specific values.
10. **Operating temperature range**: Please refer to the data sheet for specific values.

Domain and module applications:

Applicable fields and modules:

1. **Power switch**: The high drain-source voltage and medium on-resistance of IRF520STRR-VB make it very suitable for power switching applications. For example, in DC-DC converters, it can be used as the main switch to ensure the efficiency and stability of power conversion. It can also be used for switch control in power modules to handle medium current loads and improve system reliability.

2. **Electric vehicles and battery management**: Although the current handling capability of this MOSFET is relatively low, its high drain-source voltage and low threshold voltage make it suitable for medium and low power applications in electric vehicles and battery management systems. It can be used in battery protection circuits and low power control applications in electric vehicles to ensure the safety and stability of the system.

3. **Signal switch and regulation**: Due to its lower threshold voltage, IRF520STRR-VB is suitable for signal switching and regulation applications. For example, it can be used in signal switching or regulation circuits in audio amplifiers to provide efficient signal control and regulation functions and optimize signal processing performance.

4. **Small Motor Drive**: In small motor drive systems, IRF520STRR-VB can be used for motor start/stop control or speed regulation. Its moderate current handling capability and high drain-source voltage are suitable for the control of small and medium power motors, providing stable switching performance and improving the operating efficiency of the motors.

Through these applications, IRF520STRR-VB has demonstrated its reliable performance in medium-to-high voltage and medium current switching applications, and is a practical component in various power management and control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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