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IRF520NSTRR-VB Product details
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IRF520NSTRR-VB MOSFET Product Introduction
IRF520NSTRR-VB is a single N-channel power MOSFET in TO-263 package based on trench technology. This MOSFET operates at a drain-source voltage of 100V, has a moderate on-resistance and high current handling capability. It is designed for a variety of medium-power applications, especially for switching applications requiring higher voltage and current, providing stable performance and reliable control.
IRF520NSTRR-VB is a single N-channel power MOSFET in TO-263 package based on trench technology. This MOSFET operates at a drain-source voltage of 100V, has a moderate on-resistance and high current handling capability. It is designed for a variety of medium-power applications, especially for switching applications requiring higher voltage and current, providing stable performance and reliable control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package type**: TO-263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: Trench
1. **Package type**: TO-263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.8V
6. **On-resistance (RDS(ON))**:
- 100mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 20A
8. **Technology type**: Trench
Domain and module applications：
Applications and applicable modules
1. **Power switch**: The 100V drain-source voltage and 20A current handling capability of the IRF520NSTRR-VB make it ideal for use as a power switch. It can provide reliable switching functions in power management, power supply, and power conversion circuits, especially in applications that require higher voltages and currents, such as DC-DC converters and power adapters.
2. **Motor drive**: This MOSFET is suitable for medium-power motor drive applications. In the drive circuits of power tools, household appliances, and small industrial motors, it can provide stable switching operation and good current control, and is suitable for use as a switching element in motor controllers.
3. **Power amplifier**: In audio amplifiers and RF amplifiers, the IRF520NSTRR-VB can be used as a switch or amplification element in the gain stage. Its high voltage carrying capability and good current handling characteristics make it suitable for medium-power amplifier design, providing efficient power amplification.
4. **High voltage switching applications**: Due to its 100V drain-source voltage, the IRF520NSTRR-VB is suitable for application scenarios that require high voltage switching, such as high voltage relays and switching power supply modules. In these applications, it can effectively control current and maintain reliable operation in high voltage environments.
1. **Power switch**: The 100V drain-source voltage and 20A current handling capability of the IRF520NSTRR-VB make it ideal for use as a power switch. It can provide reliable switching functions in power management, power supply, and power conversion circuits, especially in applications that require higher voltages and currents, such as DC-DC converters and power adapters.
2. **Motor drive**: This MOSFET is suitable for medium-power motor drive applications. In the drive circuits of power tools, household appliances, and small industrial motors, it can provide stable switching operation and good current control, and is suitable for use as a switching element in motor controllers.
3. **Power amplifier**: In audio amplifiers and RF amplifiers, the IRF520NSTRR-VB can be used as a switch or amplification element in the gain stage. Its high voltage carrying capability and good current handling characteristics make it suitable for medium-power amplifier design, providing efficient power amplification.
4. **High voltage switching applications**: Due to its 100V drain-source voltage, the IRF520NSTRR-VB is suitable for application scenarios that require high voltage switching, such as high voltage relays and switching power supply modules. In these applications, it can effectively control current and maintain reliable operation in high voltage environments.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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