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IRF510SPBF-VB Product details
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IRF510SPBF-VB Product Introduction
**IRF510SPBF-VB** is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. This MOSFET uses Trench technology and has a relatively high on-resistance, making it suitable for various power switching and amplification applications. Its maximum drain-source voltage (VDS) is 100V, and it can operate stably in a high voltage environment, with a maximum gate-source voltage (VGS) of ±20V. The IRF510SPBF-VB provides reliable performance and high current handling capability, making it ideal for high voltage power management, power amplifiers, and other electronic circuits requiring high voltage.
**IRF510SPBF-VB** is a high voltage single N-channel MOSFET in TO263 package, designed for high voltage and medium current applications. This MOSFET uses Trench technology and has a relatively high on-resistance, making it suitable for various power switching and amplification applications. Its maximum drain-source voltage (VDS) is 100V, and it can operate stably in a high voltage environment, with a maximum gate-source voltage (VGS) of ±20V. The IRF510SPBF-VB provides reliable performance and high current handling capability, making it ideal for high voltage power management, power amplifiers, and other electronic circuits requiring high voltage.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 1.8V | 20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
- **Package**: TO263
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (VDS)**: 100V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.8V
- **On-resistance (RDS(ON))**: 100mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 20A
- **Technology**: Trench
Domain and module applications：
Applications and modules
**1. Power switch**
IRF510SPBF-VB is suitable for high voltage power switch applications. Due to its high drain-source voltage (VDS) and high on-resistance, it is very suitable for use as a switching element under high voltage conditions. Especially in high voltage power circuits that need to control medium currents, this MOSFET can provide stable and reliable switching performance.
**2. Power amplifier**
In power amplifier circuits, the high voltage carrying capacity and moderate current handling capacity of IRF510SPBF-VB make it an ideal choice. It can effectively handle the higher voltage in the amplifier and provide relatively stable amplification performance, which is suitable for high voltage RF and audio amplifier applications.
**3. High voltage switching power supply**
IRF510SPBF-VB is also suitable for use as a switching element in high voltage switching power supplies (SMPS). Although its on-resistance is relatively high, its high drain-source voltage (VDS) and high current handling capability enable it to operate stably in high voltage environments, making it suitable for high voltage conversion and power management systems.
**4. Electronic load control**
In electronic load control applications, the IRF510SPBF-VB can be used as a load switch element, especially in scenarios where high voltage handling is required. It can effectively control current and operate stably under high voltage conditions, making it suitable for applications such as battery testing and electronic load simulation.
These applications demonstrate the applicability of the IRF510SPBF-VB in high voltage and medium current electronic systems, especially providing reliable performance in power switches, power amplifiers, and high voltage switching power supplies.
**1. Power switch**
IRF510SPBF-VB is suitable for high voltage power switch applications. Due to its high drain-source voltage (VDS) and high on-resistance, it is very suitable for use as a switching element under high voltage conditions. Especially in high voltage power circuits that need to control medium currents, this MOSFET can provide stable and reliable switching performance.
**2. Power amplifier**
In power amplifier circuits, the high voltage carrying capacity and moderate current handling capacity of IRF510SPBF-VB make it an ideal choice. It can effectively handle the higher voltage in the amplifier and provide relatively stable amplification performance, which is suitable for high voltage RF and audio amplifier applications.
**3. High voltage switching power supply**
IRF510SPBF-VB is also suitable for use as a switching element in high voltage switching power supplies (SMPS). Although its on-resistance is relatively high, its high drain-source voltage (VDS) and high current handling capability enable it to operate stably in high voltage environments, making it suitable for high voltage conversion and power management systems.
**4. Electronic load control**
In electronic load control applications, the IRF510SPBF-VB can be used as a load switch element, especially in scenarios where high voltage handling is required. It can effectively control current and operate stably under high voltage conditions, making it suitable for applications such as battery testing and electronic load simulation.
These applications demonstrate the applicability of the IRF510SPBF-VB in high voltage and medium current electronic systems, especially providing reliable performance in power switches, power amplifiers, and high voltage switching power supplies.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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