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IRF4905NS-VB Product details
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IRF4905NS-VB Product Introduction
IRF4905NS-VB is a high-performance P-channel MOSFET in TO263 package, designed for high current and high efficiency applications. It has a drain-source voltage (VDS) of up to -60V and an extremely low on-resistance (RDS(ON)), which can provide low power consumption performance under high current conditions. This MOSFET uses trench technology (Trench), which optimizes the switching performance, making it suitable for load switching and power management applications that require high current handling and low power consumption.
IRF4905NS-VB is a high-performance P-channel MOSFET in TO263 package, designed for high current and high efficiency applications. It has a drain-source voltage (VDS) of up to -60V and an extremely low on-resistance (RDS(ON)), which can provide low power consumption performance under high current conditions. This MOSFET uses trench technology (Trench), which optimizes the switching performance, making it suitable for load switching and power management applications that require high current handling and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -110A | 6.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -60V | -3V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
IRF4905NS-VB Detailed parameters
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**: 8.5mΩ@VGS=4.5V, 6.5mΩ@VGS=10V
- **Drain current (ID)**: -110A
- **Technology**: Trench technology
- **Typical applications**: Power management system, load switch, reverse current protection
- **Package type**: TO263
- **Configuration**: Single P-channel
- **Drain-source voltage (VDS)**: -60V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -3V
- **On-resistance (RDS(ON))**: 8.5mΩ@VGS=4.5V, 6.5mΩ@VGS=10V
- **Drain current (ID)**: -110A
- **Technology**: Trench technology
- **Typical applications**: Power management system, load switch, reverse current protection
Domain and module applications：
Applications and modules
1. **High-efficiency power management**: IRF4905NS-VB performs well in high-efficiency power management systems, especially for DC-DC converters and synchronous rectifiers. Its low on-resistance and high current capability (-110A) can effectively reduce power consumption and improve conversion efficiency, especially in power systems with high power requirements.
2. **Load switch**: In load switch applications, the low RDS(ON) value and high current handling capability of IRF4905NS-VB enable it to efficiently control the load, especially for load switch scenarios that require high current, such as battery switching, load switching, etc. Its high drain-source voltage (-60V) can handle large load voltages and provide stable switching control.
3. **Reverse current protection**: IRF4905NS-VB performs well in reverse current protection circuits. Its high current handling capability and low on-resistance make it suitable for protecting power systems from reverse current damage. In various power protection applications, the high reliability and low power consumption characteristics of MOSFET can effectively prevent circuit damage.
4. **Automotive Electronics**: In automotive electronic systems, the high current capability and stable performance of IRF4905NS-VB make it suitable for battery management systems and other high-power automotive electronic devices. Its low on-resistance helps reduce power consumption and optimize the performance of automotive electrical systems.
These application examples show the wide applicability of IRF4905NS-VB in power management, high-power load switching and reverse current protection, which can meet a variety of demanding power and control applications.
1. **High-efficiency power management**: IRF4905NS-VB performs well in high-efficiency power management systems, especially for DC-DC converters and synchronous rectifiers. Its low on-resistance and high current capability (-110A) can effectively reduce power consumption and improve conversion efficiency, especially in power systems with high power requirements.
2. **Load switch**: In load switch applications, the low RDS(ON) value and high current handling capability of IRF4905NS-VB enable it to efficiently control the load, especially for load switch scenarios that require high current, such as battery switching, load switching, etc. Its high drain-source voltage (-60V) can handle large load voltages and provide stable switching control.
3. **Reverse current protection**: IRF4905NS-VB performs well in reverse current protection circuits. Its high current handling capability and low on-resistance make it suitable for protecting power systems from reverse current damage. In various power protection applications, the high reliability and low power consumption characteristics of MOSFET can effectively prevent circuit damage.
4. **Automotive Electronics**: In automotive electronic systems, the high current capability and stable performance of IRF4905NS-VB make it suitable for battery management systems and other high-power automotive electronic devices. Its low on-resistance helps reduce power consumption and optimize the performance of automotive electrical systems.
These application examples show the wide applicability of IRF4905NS-VB in power management, high-power load switching and reverse current protection, which can meet a variety of demanding power and control applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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