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IRF4435TR-VB Product details

Product introduction:

Product Introduction - IRF4435TR-VB
IRF4435TR-VB is a high-performance P-channel MOSFET in SOP8 package and designed based on Trench technology. This MOSFET has a drain-source withstand voltage of -30V and a drain current handling capability of up to -9A. Its low on-resistance and good current handling capability make it very suitable for use in various switching and power management applications. IRF4435TR-VB is particularly suitable for load switching and power conversion applications that require low on-resistance and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Single-P -30V -1.7V -9A 18mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Single-P -30V -1.7V -9A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Single-P -30V -1.7V -9A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Single-P
Parameter Description
- **Model:** IRF4435TR-VB
- **Package:** SOP8
- **Channel Type:** Single P-channel
- **Maximum drain-source voltage (VDS):** -30V
- **Maximum gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** -1.7V
- **On-resistance (RDS(ON)):**
- 24mΩ @ VGS=4.5V
- 18mΩ @ VGS=10V
- **Maximum continuous drain current (ID):** -9A
- **Technology:** Trench technology
- **Maximum power consumption:** 1.5W (depending on heat dissipation conditions)
- **Operating temperature range:** -55°C to 175°C

Domain and module applications:

Applications and modules

1. **Load switch**
The low on-resistance (RDS(ON) of 18mΩ @ VGS=10V and 24mΩ @ VGS=4.5V) and high current handling capability of IRF4435TR-VB make it very efficient in load switch applications. It can effectively switch and control load current and is widely used in power management circuits and load switching circuits, such as switching power supplies, intelligent power management modules, etc.

2. **Power management**
In power management systems, IRF4435TR-VB can be used for efficient power conversion and management. Its low RDS(ON) can reduce conduction losses and improve power efficiency, making it suitable for use in battery-powered devices, power regulators, and power management modules to improve the overall energy efficiency of the system.

3. **DC-DC Converters**
The IRF4435TR-VB is suitable for high-efficiency switching in DC-DC converters, especially in applications that require low on-resistance and high current handling capabilities. It can be used in areas such as battery-driven devices, portable electronic devices, and electric vehicles to improve conversion efficiency and reduce power consumption.

4. **Automotive Electronics**
In automotive electronic systems, the IRF4435TR-VB can be used for high-efficiency load switching and power management applications, such as on-board power modules, battery management systems, and power distribution systems for electric vehicles. Its high withstand voltage and low on-resistance make it suitable for switching and controlling tasks that handle high-current loads in automobiles.

Overall, the IRF4435TR-VB is a high-efficiency, low on-resistance P-channel MOSFET that is suitable for a variety of power management and switching applications that require high power and high efficiency, including load switching, power management, battery-powered devices, and automotive electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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