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IRF3713STRPBF-VB Product details
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IRF3713STRPBF-VB MOSFET Product Introduction
The IRF3713STRPBF-VB is a high-performance unipolar N-channel MOSFET in a TO263 package designed for high current and low voltage applications. It utilizes advanced trench technology to provide extremely low on-resistance and high current handling capability. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the maximum gate-source voltage (VGS) is ±20V. The high drain current capability (150A) and low on-resistance of the IRF3713STRPBF-VB enable it to excel in applications such as power conversion and load switching.
The IRF3713STRPBF-VB is a high-performance unipolar N-channel MOSFET in a TO263 package designed for high current and low voltage applications. It utilizes advanced trench technology to provide extremely low on-resistance and high current handling capability. The maximum drain-source voltage (VDS) of this MOSFET is 30V, and the maximum gate-source voltage (VGS) is ±20V. The high drain current capability (150A) and low on-resistance of the IRF3713STRPBF-VB enable it to excel in applications such as power conversion and load switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | 2.3mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
- **Package:** TO263
- **Configuration:** Unipolar N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Drain current (ID):** 150A
- **Technology:** Trench technology
- **Operating temperature range:** -55°C to 175°C
- **Package:** TO263
- **Configuration:** Unipolar N-channel
- **Drain-source voltage (VDS):** 30V
- **Gate-source voltage (VGS):** ±20V
- **Threshold voltage (Vth):** 1.7V
- **On-resistance (RDS(ON)):**
- 3.2mΩ @ VGS = 4.5V
- 2.3mΩ @ VGS = 10V
- **Drain current (ID):** 150A
- **Technology:** Trench technology
- **Operating temperature range:** -55°C to 175°C
Domain and module applications：
Applications and Examples
1. **High-efficiency power conversion:**
IRF3713STRPBF-VB performs well in **DC-DC converters**, where its low on-resistance and high current handling capability can significantly improve converter efficiency and reduce power losses. This makes it ideal for **computer power supplies** and **high-efficiency power systems**, especially where large currents need to be handled.
2. **Motor drive systems:**
In **motor control applications**, this MOSFET can handle currents up to 150A, making it ideal for **industrial motor drives** and **automotive motor control**. Its fast switching characteristics and high current carrying capacity can improve motor control accuracy and response speed, ensuring smooth operation.
3. **Battery Management System (BMS):**
IRF3713STRPBF-VB is suitable for **battery protection circuits**, especially in **electric vehicles** and **energy storage systems**, which can effectively manage and protect large-capacity battery packs, ensure battery safety and stability, and extend battery life.
4. **High-current load switch:**
Due to its low RDS(ON) and high drain current capability, this MOSFET is an ideal choice for **high-current load switches**. For example, in load control in **data centers** and **communication equipment**, IRF3713STRPBF-VB can work stably under high current conditions, reduce energy loss, and improve the overall efficiency of the system.
These application examples demonstrate the wide applicability of IRF3713STRPBF-VB in the fields of power management, motor control, battery protection, and load switching, providing reliable and high-performance solutions.
1. **High-efficiency power conversion:**
IRF3713STRPBF-VB performs well in **DC-DC converters**, where its low on-resistance and high current handling capability can significantly improve converter efficiency and reduce power losses. This makes it ideal for **computer power supplies** and **high-efficiency power systems**, especially where large currents need to be handled.
2. **Motor drive systems:**
In **motor control applications**, this MOSFET can handle currents up to 150A, making it ideal for **industrial motor drives** and **automotive motor control**. Its fast switching characteristics and high current carrying capacity can improve motor control accuracy and response speed, ensuring smooth operation.
3. **Battery Management System (BMS):**
IRF3713STRPBF-VB is suitable for **battery protection circuits**, especially in **electric vehicles** and **energy storage systems**, which can effectively manage and protect large-capacity battery packs, ensure battery safety and stability, and extend battery life.
4. **High-current load switch:**
Due to its low RDS(ON) and high drain current capability, this MOSFET is an ideal choice for **high-current load switches**. For example, in load control in **data centers** and **communication equipment**, IRF3713STRPBF-VB can work stably under high current conditions, reduce energy loss, and improve the overall efficiency of the system.
These application examples demonstrate the wide applicability of IRF3713STRPBF-VB in the fields of power management, motor control, battery protection, and load switching, providing reliable and high-performance solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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