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IRF3711ZS-VB Product details
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IRF3711ZS-VB MOSFET Product Introduction
The IRF3711ZS-VB is a single N-channel power MOSFET in a TO-263 package based on advanced trench technology. This MOSFET has low on-resistance and high current handling capability, and can provide excellent switching performance at a drain-source voltage of 30V. This device is designed to meet the needs of high power and high efficiency applications and is ideal for power management, drive circuits, and other high current applications.
The IRF3711ZS-VB is a single N-channel power MOSFET in a TO-263 package based on advanced trench technology. This MOSFET has low on-resistance and high current handling capability, and can provide excellent switching performance at a drain-source voltage of 30V. This device is designed to meet the needs of high power and high efficiency applications and is ideal for power management, drive circuits, and other high current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package type**: TO-263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 98A
8. **Technology type**: Trench
1. **Package type**: TO-263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 30V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 1.7V
6. **On-resistance (RDS(ON))**:
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 98A
8. **Technology type**: Trench
Domain and module applications：
Applications and applicable modules
1. **High-efficiency power conversion**: The ultra-low on-resistance and high current handling capability of the IRF3711ZS-VB make it very suitable for use in high-efficiency DC-DC converters. It can significantly reduce power loss and improve conversion efficiency, and is widely used in fields that require efficient power management, such as computer power supplies, communication equipment, and power adapters.
2. **Motor drive applications**: In motor control systems for power tools, electric vehicles, and home appliances, this MOSFET can be used as a switching element in the motor drive bridge circuit. Its high current carrying capacity and low on-resistance provide stable motor drive, ensuring efficient and reliable motor control.
3. **Synchronous rectification**: Due to its low RDS(ON), the IRF3711ZS-VB performs well in synchronous rectification applications, can reduce energy loss in the rectification process, and is suitable for high-efficiency power supply designs, such as LED driver power supplies, portable chargers, etc., to improve overall system efficiency.
4. **Battery Management System (BMS)**: In battery management systems, especially in electric vehicles and energy storage systems, this MOSFET provides efficient charge and discharge control and protection functions, and its high current handling capability ensures the safety and efficiency of the system.
1. **High-efficiency power conversion**: The ultra-low on-resistance and high current handling capability of the IRF3711ZS-VB make it very suitable for use in high-efficiency DC-DC converters. It can significantly reduce power loss and improve conversion efficiency, and is widely used in fields that require efficient power management, such as computer power supplies, communication equipment, and power adapters.
2. **Motor drive applications**: In motor control systems for power tools, electric vehicles, and home appliances, this MOSFET can be used as a switching element in the motor drive bridge circuit. Its high current carrying capacity and low on-resistance provide stable motor drive, ensuring efficient and reliable motor control.
3. **Synchronous rectification**: Due to its low RDS(ON), the IRF3711ZS-VB performs well in synchronous rectification applications, can reduce energy loss in the rectification process, and is suitable for high-efficiency power supply designs, such as LED driver power supplies, portable chargers, etc., to improve overall system efficiency.
4. **Battery Management System (BMS)**: In battery management systems, especially in electric vehicles and energy storage systems, this MOSFET provides efficient charge and discharge control and protection functions, and its high current handling capability ensures the safety and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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