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IRF3710ZSTRPBF-VB Product details
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IRF3710ZSTRPBF-VB MOSFET Product Introduction
The IRF3710ZSTRPBF-VB is a single N-channel power MOSFET in a TO-263 package based on advanced trench technology. It is capable of operating at a drain-source voltage of 100V, has high current carrying capacity and low on-resistance, and is particularly suitable for high power and high voltage applications. This MOSFET is designed to provide efficient switching performance and reliable current control, and is suitable for a variety of application scenarios requiring high current, high voltage and high efficiency.
The IRF3710ZSTRPBF-VB is a single N-channel power MOSFET in a TO-263 package based on advanced trench technology. It is capable of operating at a drain-source voltage of 100V, has high current carrying capacity and low on-resistance, and is particularly suitable for high power and high voltage applications. This MOSFET is designed to provide efficient switching performance and reliable current control, and is suitable for a variety of application scenarios requiring high current, high voltage and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | 10mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 100V | 2.5V | 100A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
Detailed parameter description
1. **Package type**: TO-263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 100A
8. **Technology type**: Trench
1. **Package type**: TO-263
2. **Configuration**: Single N-channel
3. **Drain-source voltage (VDS)**: 100V
4. **Gate-source voltage (VGS)**: ±20V
5. **Threshold voltage (Vth)**: 2.5V
6. **On-resistance (RDS(ON))**:
- 23mΩ @ VGS=4.5V
- 10mΩ @ VGS=10V
7. **Maximum drain current (ID)**: 100A
8. **Technology type**: Trench
Domain and module applications：
Application fields and applicable modules
1. **High-power power conversion**: The high voltage and high current characteristics of IRF3710ZSTRPBF-VB make it very suitable for high-power DC-DC converters. This MOSFET can effectively reduce power loss and improve conversion efficiency during power conversion, and is suitable for industrial power supplies, server power supplies, and efficient energy management systems.
2. **Motor drive system**: In motor drive applications that require high voltage and high current, IRF3710ZSTRPBF-VB can be used as a switching element in the motor drive bridge circuit, especially in electric vehicles, power tools, and large household appliances, to provide reliable motor control and efficient operating performance.
3. **High-voltage synchronous rectification**: Due to its low on-resistance, this MOSFET is suitable for high-voltage synchronous rectification applications. It can significantly reduce rectification losses and improve the efficiency of the power supply system. It is widely used in high-efficiency rectification designs in high-voltage power adapters, LED driver power supplies, and communication equipment.
4. **Battery Management System**: In battery management systems (BMS), especially for electric vehicles and large energy storage systems, the high voltage and high current capabilities of the IRF3710ZSTRPBF-VB enable it to provide efficient and reliable charge and discharge control and protection, ensuring the safety and efficiency of the system.
1. **High-power power conversion**: The high voltage and high current characteristics of IRF3710ZSTRPBF-VB make it very suitable for high-power DC-DC converters. This MOSFET can effectively reduce power loss and improve conversion efficiency during power conversion, and is suitable for industrial power supplies, server power supplies, and efficient energy management systems.
2. **Motor drive system**: In motor drive applications that require high voltage and high current, IRF3710ZSTRPBF-VB can be used as a switching element in the motor drive bridge circuit, especially in electric vehicles, power tools, and large household appliances, to provide reliable motor control and efficient operating performance.
3. **High-voltage synchronous rectification**: Due to its low on-resistance, this MOSFET is suitable for high-voltage synchronous rectification applications. It can significantly reduce rectification losses and improve the efficiency of the power supply system. It is widely used in high-efficiency rectification designs in high-voltage power adapters, LED driver power supplies, and communication equipment.
4. **Battery Management System**: In battery management systems (BMS), especially for electric vehicles and large energy storage systems, the high voltage and high current capabilities of the IRF3710ZSTRPBF-VB enable it to provide efficient and reliable charge and discharge control and protection, ensuring the safety and efficiency of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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