IRF3709STRR-VB Product details
Product introduction:
The IRF3709STRR-VB is a high-performance N-channel MOSFET in a TO263 package, designed based on Trench technology. This MOSFET has a drain-source withstand voltage of 30V and a drain current handling capability of up to 98A. Its extremely low on-resistance and high current capability enable it to excel in high-efficiency switching and power management applications. The low RDS(ON) and high rated current of this MOSFET make it ideal for power modules, DC-DC converters, and other power-intensive applications that require high power and high efficiency.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | 2.4mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 30V | 1.7V | 98A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- **Model:** IRF3709STRR-VB
- **Package:** TO263
- **Channel Type:** Single N-channel
- **Maximum Drain-Source Voltage (VDS):** 30V
- **Maximum Gate-Source Voltage (VGS):** ±20V
- **Threshold Voltage (Vth):** 1.7V
- **On-Resistance (RDS(ON)):**
- 2.7mΩ @ VGS=4.5V
- 2.4mΩ @ VGS=10V
- **Maximum Continuous Drain Current (ID):** 98A
- **Technology:** Trench Technology
- **Power Consumption:** Up to 3W (depending on package and heat dissipation conditions)
- **Operating Temperature Range:** -55°C to 175°C
Domain and module applications:
1. **High-efficiency switching power supply (SMPS)**
The ultra-low on-resistance (RDS(ON) of 2.7mΩ @ VGS=4.5V and 2.4mΩ @ VGS=10V) and high current handling capability of the IRF3709STRR-VB make it ideal for synchronous rectification in high-efficiency switching power supplies. Its high current capability and low power consumption enable it to provide high efficiency in high-power power modules, especially in power supply designs that require high efficiency and low power consumption.
2. **DC-DC Converter**
In a DC-DC converter, the low RDS(ON) and high current handling capability of the IRF3709STRR-VB make it an ideal main switch. It can efficiently handle high current loads and is ideal for efficient step-down conversion applications such as power management systems, communication equipment, and industrial power modules.
3. **Electric Vehicle (EV) Power System**
This MOSFET performs well in the power management system of electric vehicles. Due to its high rated current and low on-resistance, the IRF3709STRR-VB can effectively manage battery power and drive motors, improving the overall efficiency and stability of the power system.
4. **Motor Drive and Load Switch**
The high current capability and ultra-low RDS(ON) of the IRF3709STRR-VB make it ideal for high-power motor drive applications. Its excellent on-state performance and high current handling capability can effectively handle the high currents required during motor startup and operation, making it suitable for a variety of motor drive and load switching applications.
Overall, the IRF3709STRR-VB is an efficient and reliable N-channel MOSFET suitable for applications requiring high current and low power consumption, providing excellent performance and reliability for high-efficiency switching power supplies, DC-DC converters, electric vehicle power systems, and high-power motor drives.
Technical support:
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